Title:
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/169175
Kind Code:
A1
Abstract:
This nitride semiconductor substrate comprises a substrate made from an n-type semiconductor, and a drift layer formed on the substrate and made from gallium nitride which includes donors and carbons. The concentration of the donors in the drift layer is no more than 5.0×1016 donors/cm3, and across the entire area of the drift layer, is no less than the concentration of carbons functioning as acceptors in the drift layer; the difference obtained by subtracting the concentration of carbons functioning as acceptors in the drift layer from the concentration of donors in the drift layer increases gradually from the substrate side towards the surface side of the drift layer.
Inventors:
NARITA YOSHINOBU (JP)
Application Number:
PCT/JP2017/004982
Publication Date:
October 05, 2017
Filing Date:
February 10, 2017
Export Citation:
Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L29/861; H01L21/20; H01L21/205; H01L21/329; H01L29/06; H01L29/47; H01L29/868; H01L29/872
Foreign References:
| JP2007149985A | 2007-06-14 | |||
| JPH08316499A | 1996-11-29 | |||
| JPH04262579A | 1992-09-17 | |||
| JP2010219490A | 2010-09-30 | |||
| JP2014051423A | 2014-03-20 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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