Title:
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, SUBSTRATE SELECTION PROGRAM, SUBSTRATE DATA OUTPUT PROGRAM, NITRIDE SEMICONDUCTOR SUBSTRATE PROVIDED WITH SUBSTRATE DATA OUTPUT PROGRAM, OFF-ANGLE COORDINATE MAP, NITRIDE SEMICONDUCTOR SUBSTRATE PROVIDED WITH OFF-ANGLE COORDINATE MAP, SEMICONDUCTOR DEVICE SELECTION PROGRAM, NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR LAMINATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE DATA OUTPUT METHOD
Document Type and Number:
WIPO Patent Application WO/2019/082472
Kind Code:
A1
Abstract:
Provided is a nitride semiconductor substrate which is formed of a crystal of a group-III nitride semiconductor and has a principal face, wherein a low-index crystal face closest to the principal face is the (0001) plane which is curved in a concave spherical shape with respect to the principal face, and the off-angle (θm, θa) at a position (x, y) within the principal face is approximated by formula (1), when: the coordinate of a position that lies within the principal face in a direction along the <1-100> axis of the crystal is defined as x; the coordinate of a position that lies within the principal face in a direction along the <11-20> axis of the crystal is defined as y; the coordinates (x, y) of the center of the principal face is defined as (0, 0), the directional component, which is parallel to the <1-100> axis in an off-angle of the <0001> axis of the crystal with respect to a normal line of the principal face, is defined as θm; the directional component, which is parallel to the <11-20> axis in the off-angle, is defined as θa; the proportion of a change in the off-angle (θm, θa) with respect to the position (x, y) within the principal face is defined as (M1, A1); and the off-angle (θm, θa) at the center of the principal face is defined as (M2, A2).
Inventors:
HORIKIRI FUMIMASA (JP)
YOSHIDA TAKEHIRO (JP)
YOSHIDA TAKEHIRO (JP)
Application Number:
PCT/JP2018/029720
Publication Date:
May 02, 2019
Filing Date:
August 08, 2018
Export Citation:
Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
C30B29/38; C23C16/34; H01L21/205; H01L21/66
Domestic Patent References:
| WO2016136552A1 | 2016-09-01 |
Foreign References:
| JP2008308377A | 2008-12-25 | |||
| JP2005056979A | 2005-03-03 | |||
| JP2008098664A | 2008-04-24 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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