Title:
NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/063046
Kind Code:
A1
Abstract:
The present invention is a nitride semiconductor substrate comprising: a growth substrate in which a single crystal silicon layer is formed on a composite substrate obtained by laminating a plurality of layers; and a nitride semiconductor thin film formed on the single crystal silicon layer of the growth substrate, the nitride semiconductor substrate being characterized in that the carbon concentration of the single crystal silicon layer is 5E17 atoms/cm3 to 1E22 atoms/cm3. Consequently, provided are: a nitride semiconductor substrate in which the resistivity becomes low by diffusing Al in a single crystal silicon layer during the growth of a nitride semiconductor, and deterioration in high frequency characteristics is suppressed; and a manufacturing method therefor.
Inventors:
KUBONO IPPEI (JP)
HAGIMOTO KAZUNORI (JP)
MIZUSAWA YASUSHI (JP)
ABE TATSUO (JP)
MATSUBARA TOSHIKI (JP)
SUZUKI ATSUSHI (JP)
OHTSUKI TSUYOSHI (JP)
HAGIMOTO KAZUNORI (JP)
MIZUSAWA YASUSHI (JP)
ABE TATSUO (JP)
MATSUBARA TOSHIKI (JP)
SUZUKI ATSUSHI (JP)
OHTSUKI TSUYOSHI (JP)
Application Number:
PCT/JP2022/035314
Publication Date:
April 20, 2023
Filing Date:
September 22, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/20
Domestic Patent References:
| WO2022181163A1 | 2022-09-01 |
Foreign References:
| JP2019523994A | 2019-08-29 | |||
| JP2020184616A | 2020-11-12 | |||
| JP2012151401A | 2012-08-09 | |||
| JP2005203666A | 2005-07-28 | |||
| JP2006196713A | 2006-07-27 | |||
| JP2014229872A | 2014-12-08 | |||
| JP2013080776A | 2013-05-02 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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