Title:
NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/136446
Kind Code:
A1
Abstract:
[Problem] To provide a transparent nitride semiconductor template having a high-quality nitride semiconductor, being suitable for use in an ultraviolet LED, and having electroconductivity, and a manufacturing method allowing simple manufacture of same. [Solution] Provided is a nitride semiconductor template 10 having: a Ga2O3 substrate 11; a buffer layer 12 formed on the Ga2O3 substrate 11 and having AlN as a principal component; a first nitride semiconductor layer 13 formed on the buffer layer 12 and having AlxGa1-xN (0.2 < x ≤ 1) as a principal component; and a second nitride semiconductor layer 14 formed on the first nitride semiconductor layer 13 and having AlyGa1-yN (0.2 ≤ y ≤ 0.55, y < x) as a principal component.
Inventors:
MORISHIMA YOSHIKATSU (JP)
IIZUKA KAZUYUKI (JP)
KURAMATA AKITO (JP)
HIRAYAMA HIDEKI (JP)
IIZUKA KAZUYUKI (JP)
KURAMATA AKITO (JP)
HIRAYAMA HIDEKI (JP)
Application Number:
PCT/JP2016/053695
Publication Date:
September 01, 2016
Filing Date:
February 08, 2016
Export Citation:
Assignee:
TAMURA SEISAKUSHO KK (JP)
RIKEN (JP)
RIKEN (JP)
International Classes:
H01L21/205; C30B25/18; C30B29/38; H01L21/20; H01L33/12; H01L33/32
Domestic Patent References:
| WO2011027896A1 | 2011-03-10 | |||
| WO2013180058A1 | 2013-12-05 | |||
| WO2013054916A1 | 2013-04-18 |
Foreign References:
| JP2015005534A | 2015-01-08 |
Attorney, Agent or Firm:
HIRATA, Tadao (JP)
Tadao Hirata (JP)
Tadao Hirata (JP)
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