NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING DEVICE

WIPO Patent Application WO/2015/068980

A1

The present invention relates to a nitride semiconductor ultraviolet light-emitting device capable of improving electrical characteristics and photoconversion efficiency by forming, on an exposed surface of an n-type semiconductor layer, an n-electrode forming layer capable of enhancing characteristics of contact with an n-electrode. To this end, the nitride semiconductor ultraviolet light-emitting device of the present invention comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are sequentially stacked on a substrate, and is equipped with an n-type electrode and a p-type electrode so as to apply electric current, wherein as a part of the p-type semiconductor layer, the active layer and the n-type layer are etched, a part or the whole of the exposed surface of the exposed n-type semiconductor layer is equipped with an n-electrode forming layer, and an n-type metal layer is formed on the upper side of the exposed side of the n-type semiconductor layer so as to cover the n-electrode forming layer, the n-electrode forming layer being configured to have lower band-gap energy than the n-type semiconductor layer.

JP5847732	Semiconductor devices and their manufacturing methods
WO/2017/222279	SEMICONDUCTOR DEVICE
WO/2018/147637	LIGHT EMITTING DIODE AND LIGHT EMITTING MODULE COMPRISING SAME

KIM DONG YEONG (KR)
KIM JONG KYU (KR)

PCT/KR2014/010224

May 14, 2015

October 29, 2014

Click for automatic bibliography generation  

POSTECH ACAD IND FOUND (KR)

H01L33/36

JP2012089754A	2012-05-10
KR20070028095A	2007-03-12
KR101026059B1	2011-04-04
JP2011142231A	2011-07-21

IAM PATENT FIRM (KR)
특허법인 아이엠 (KR)

View/Download PDF      PDF Help

Previous Patent: METHOD FOR OPERATING REDOX FLOW BATTERY

Next Patent: MULTI-BAND, MULTI-POLARIZED WIRELESS COMMUNICATION ANTENNA