NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING SAME

Title:

NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2023/248702

Kind Code:

A1

Abstract:

The present invention relates to a nitride semiconductor wafer comprising a silicon-based substrate, a buffer layer that comprises a nitride semiconductor and is laminated on the silicon-based substrate; and a functional layer that includes at least a GaN layer and is laminated on the buffer layer, the nitride semiconductor wafer being characterized in that: the buffer layer is doped with Fe; the Fe concentration distribution in the lamination direction of the buffer layer has a point where the Fe concentration is the highest, and the Fe concentration decreases from the point where the Fe concentration is the highest toward the functional layer; the Fe concentration at the point where the Fe concentration is the highest is 2.5×1018 atoms/cm3 to 6.0×1018 atoms/cm3 inclusive; and the Fe concentration in an upper surface of the functional layer side of the buffer layer is 4.0×1017atoms/cm3 or less. The present invention thus provides a nitride semiconductor wafer in which warping is suppressed.

Inventors:

HAGIMOTO KAZUNORI (JP)
KUBONO IPPEI (JP)

Application Number:

PCT/JP2023/019662

Publication Date:

December 28, 2023

Filing Date:

May 26, 2023

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)

International Classes:

H01L21/20; H01L21/338; H01L29/778; H01L29/812

Foreign References:

JP2021022726A	2021-02-18
JP2016511545A	2016-04-14
JP2014072430A	2014-04-21
JP2015053328A	2015-03-19