NON-DESTRUCTIVE READOUT FERROELECTRIC MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREFOR

WIPO Patent Application WO/2016/115826

A1

Provided are a non-destructive readout ferroelectric memory and a manufacturing method and operating method therefor. The ferroelectric memory (10) comprises a ferroelectric thin film layer (105) and a first electrode layer (107) at least partially arranged on the ferroelectric thin film layer (105), a gap (109) being arranged in the first electrode layer (107), the gap (109) being correspondingly located on the ferroelectric thin film layer (105) and dividing the first electrode layer (107) into at least two parts, and a polarization direction of an electric domain in the ferroelectric thin film layer (105) basically not being parallel to a normal direction of the ferroelectric thin film layer (105). The ferroelectric thin film layer (105) is configured to locally reverse the electric domain of a part, corresponding to the gap (109), of the ferroelectric thin film layer (105) so as to construct a domain wall conductive channel enabling two parts of the first electrode layer (107) to be electrically conducting when a read signal is biased between the two parts of the first electrode layer (107). The ferroelectric memory can achieve a non-destructive current readout way, is suitable for high-density application, and is easy to manufacture and low in cost.

JIANG ANQUAN (CN)
JIANG JUN (CN)
GENG WENPING (CN)
BAI ZILONG (CN)

PCT/CN2015/082439

July 28, 2016

June 26, 2015

Click for automatic bibliography generation  

UNIV FUDAN (CN)

G11C11/22; H01L27/115; H01L21/8247

CN104637949A	2015-05-20
CN104637948A	2015-05-20
CN101084580A	2007-12-05
US6387737B1	2002-05-14

CHINA PATENT AGENT (HK) LTD. (CN)
中国专利代理(香港)有限公司 (CN)

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