Title:
NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/119752
Kind Code:
A1
Abstract:
Provided is a non-volatile memory device according to an embodiment of the present invention. The non-volatile memory device comprises: a boron-doped silicon layer having a first surface and a second surface opposite thereto; a boron-doped silicon oxide film provided on the first surface of the silicon layer; and an upper electrode disposed on the silicon oxide film, wherein an upper surface of the silicon layer, with which the silicon oxide film is contact, is a surface (111).
Inventors:
EOM DAE JIN (KR)
KOO JA YONG (KR)
MOON CHANG YOUN (KR)
KOO JA YONG (KR)
MOON CHANG YOUN (KR)
Application Number:
PCT/KR2017/000176
Publication Date:
July 13, 2017
Filing Date:
January 06, 2017
Export Citation:
Assignee:
KOREA RES INST STANDARDS & SCI (KR)
International Classes:
H01L45/00
Foreign References:
| US20140246640A1 | 2014-09-04 | |||
| US20100006985A1 | 2010-01-14 | |||
| US20150188047A1 | 2015-07-02 | |||
| US20150188048A1 | 2015-07-02 | |||
| US20150311257A1 | 2015-10-29 |
Attorney, Agent or Firm:
KORYO IP & LAW (KR)
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