Title:
NON-VOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/040927
Kind Code:
A1
Abstract:
Provided is a non-volatile memory device provided with: a first conductive layer (12a); a second conductive layer (14a); a ferroelectric film (16a) provided between the first conductive layer and the second conductive layer; and a paraelectric film (18a) provided between the first conductive layer or the second conductive layer and the ferroelectric film, the paraelectric film being adapted to have a higher relative permittivity than that of the ferroelectric film and a film thickness of 1.5-10 nm.
Inventors:
FUJII SHOSUKE
ISHIKAWA TAKAYUKI
ISHIKAWA TAKAYUKI
Application Number:
PCT/JP2014/067583
Publication Date:
March 26, 2015
Filing Date:
July 01, 2014
Export Citation:
Assignee:
TOSHIBA KK (JP)
International Classes:
H01L27/105; H01L21/8246; H01L45/00; H01L49/00
Foreign References:
| US20120091427A1 | 2012-04-19 | |||
| JP2012243826A | 2012-12-10 | |||
| JP2014086692A | 2014-05-12 |
Other References:
LEE, H.Y. ET AL.: "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust Hf02 based RRAM", IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 2008. IEDM 2008., 15 December 2008 (2008-12-15), pages 1 - 4
Attorney, Agent or Firm:
IKEGAMI, Tetsuma et al. (JP)
Tetsuma Ikegami (JP)
Tetsuma Ikegami (JP)
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