Title:
NON-VOLATILE MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/090002
Kind Code:
A1
Abstract:
In a non-volatile memory element (100), a resistance change layer (107) comprises a first metal oxide MOx and a second metal oxide MOy. The reaction energy of the chemical reaction represented by chemical reaction formula (13) involving said first metal oxide, said second metal oxide, oxygen ions and electrons is 2 eV or less. The combination (MOx, MOy) of MOx and MOy is a combination selected from a group comprising (Cr2O3, CrO3), (Co3O4, Co2O3), (Mn3O4, Mn2O3), (VO2, V2O5), (Ce2O3, CeO2), (W3O8, WO3), (Cu2O, CuO), (SnO, SnO2), (NbO2, Nb2O5), and (Ti2O3, TiO2).
(13)
Inventors:
NINOMIYA TAKEKI
TAKAGI TAKESHI
WEI ZHIQIANG
TAKAGI TAKESHI
WEI ZHIQIANG
Application Number:
PCT/JP2010/000624
Publication Date:
August 12, 2010
Filing Date:
February 03, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
NINOMIYA TAKEKI
TAKAGI TAKESHI
WEI ZHIQIANG
NINOMIYA TAKEKI
TAKAGI TAKESHI
WEI ZHIQIANG
International Classes:
H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
| WO2008153099A1 | 2008-12-18 | |||
| WO2008038365A1 | 2008-04-03 |
Foreign References:
| JP2008098537A | 2008-04-24 | |||
| JP2007335869A | 2007-12-27 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house extensive 守 (JP)
New house extensive 守 (JP)
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