Title:
NON-VOLATILE MEMORY AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/034276
Kind Code:
A1
Abstract:
A non-volatile memory and a method for manufacturing the same are disclosed. The present invention can provide a resistance-variable non-volatile memory device which is made of a resistance-variable material, forms a resistance-variable layer by uniformly arranging a nano-particle having a predetermined diameter on a lower electrode, and forms a conductive filament inside the nano-particle, so that the conductive filament is uniformly formed on the resistance-variable layer, thereby ensuring a higher reliability. Further, the present invention can provide a resistance-variable non-volatile memory device in which a nano-particle having a predetermined diameter is uniformly arranged on a lower electrode and a resistance-variable layer filled with a resistance-variable material is formed therebetween, so that a conductive filament is uniformly formed between the uniformly-arranged nano-particles, thereby ensuring a higher reliability.
Inventors:
KIM TAE GEUN (KR)
CHUNG HO YOUNG (KR)
CHUNG HO YOUNG (KR)
Application Number:
PCT/KR2014/008295
Publication Date:
March 12, 2015
Filing Date:
September 04, 2014
Export Citation:
Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L27/115; H01L21/8247
Foreign References:
| KR20070014984A | 2007-02-01 | |||
| KR20100116793A | 2010-11-02 | |||
| KR20100061405A | 2010-06-07 |
Attorney, Agent or Firm:
B&IP-JOOWON PATENT AND LAW FIRM (KR)
특허법인주원 (KR)
특허법인주원 (KR)
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