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Title:
NON-VOLATILE MULTIPLE TIME PROGRAMMABLE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/007254
Kind Code:
A3
Abstract:
An apparatus includes a multiple time programmable (MTP) memory device. The MTP memory device includes a metal gate, a substrate material, and an oxide structure between the metal gate and the substrate material. The oxide structure includes a hafnium oxide layer and a silicon dioxide layer. The hafnium oxide layer is in contact with the metal gate and in contact with the silicon dioxide layer. The silicon dioxide layer is in contact with the substrate material. The MTP device includes a transistor, and a non-volatile state of the MTP memory device is based on a threshold voltage of the transistor.

Inventors:
LI XIA (US)
XU JEFFREY JUNHAO (US)
LU XIAO (US)
NOWAK MATTHEW MICHAEL (US)
KANG SEUNG HYUK (US)
CHEN XIAONAN (US)
WANG ZHONGZE (US)
LU YU (US)
Application Number:
PCT/US2015/035271
Publication Date:
March 24, 2016
Filing Date:
June 11, 2015
Export Citation:
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Assignee:
QUALCOMM INC (US)
International Classes:
G11C16/10; H01L29/423; G11C16/26; H01L27/112; H01L29/51; H01L29/792
Other References:
BUCKLEY ET AL: "Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 49, no. 11, 1 November 2005 (2005-11-01), pages 1833 - 1840, XP005183923, ISSN: 0038-1101, DOI: 10.1016/J.SSE.2005.10.005
TACKHWI LEE ET AL: "Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS Devices", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 58, no. 2, 1 February 2011 (2011-02-01), pages 562 - 566, XP011343602, ISSN: 0018-9383, DOI: 10.1109/TED.2010.2091453
VANDELLI L ET AL: "A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 58, no. 9, 1 September 2011 (2011-09-01), pages 2878 - 2887, XP011381321, ISSN: 0018-9383, DOI: 10.1109/TED.2011.2158825
YANLI ZHANG ET AL: "Temperature dependant characteristics of scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes", SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, 2007 INTERNATIONAL, IEEE, PISCATAWAY, NJ, USA, 12 December 2007 (2007-12-12), pages 1 - 2, XP031225657, ISBN: 978-1-4244-1891-6
Attorney, Agent or Firm:
TOLER, Jeffrey G. (Suite A201Austin, Texas, US)
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