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Title:
NON-VOLATILE STORAGE DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2013/125172
Kind Code:
A1
Abstract:
A resistance-changing layer (103) has a first resistance-changing layer (103a) including an oxygen-deficient first metal oxide and a second resistance-changing layer (103b) including an oxygen-deficient second metal oxide different from the first metal oxide. The second resistance-changing layer (103b) includes a non-metallic element (A) other than oxygen. When the composition of the first resistance-changing layer (103a) is represented by MOx, and the composition of the second resistance-changing layer (103b) is represented by NOyAz, the equation x < (y+z) is satisfied, the resistivity of the second resistance-changing layer (103b) is greater than the resistivity of the first resistance-changing layer (103a), and the film density of the second resistance-changing layer (103b) is less than the theoretical film density of the stoichiometric composition of the second metal oxide.

Inventors:
FUJII SATORU
MIKAWA TAKUMI
Application Number:
JP2013/000753
Publication Date:
August 29, 2013
Filing Date:
February 13, 2013
Export Citation:
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Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
International Classes:
H01L27/105; C23C14/34; C23C16/40; H01L45/00; H01L49/00
Domestic Patent References:
WO2010038423A1
Foreign References:
JP2011187925A
Attorney, Agent or Firm:
NII, Hiromori (6F Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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Claims: