Title:
NON-VOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2011/132423
Kind Code:
A1
Abstract:
Disclosed is a variable-resistance non-volatile storage device which varies resistance in a stable manner and is adapted for miniaturization. The non-volatile storage device comprises: a first wiring (101) formed by a barrier metal layer (101b) which covers the bottom face and the side face of a wiring groove formed in a first inter-layer insulation layer (103a), and by a main layer (101a) that fills the interior of the wiring groove; a first electrode (102) made of a noble metal and covering the upper surface of the first wiring (101); a plurality of memory cell holes (104) formed in a second inter-layer insulation layer (103b); a resistance varying layer (105) formed in the memory cell holes (104) and connected to the first electrode (102); and a second wiring (106) covering the resistance varying layer (105) and the memory cell holes (104). In a region (101A) in the vicinity of the memory cell holes (104), the main layer (101a) is encompassed by the barrier metal layer (101b) and the first electrode (102) in an arbitrary cross section in the width direction of the first wiring (101).
Inventors:
MIKAWA TAKUMI
SORADA HARUYUKI
SORADA HARUYUKI
Application Number:
PCT/JP2011/002328
Publication Date:
October 27, 2011
Filing Date:
April 21, 2011
Export Citation:
Assignee:
PANASONIC CORP (JP)
MIKAWA TAKUMI
SORADA HARUYUKI
MIKAWA TAKUMI
SORADA HARUYUKI
International Classes:
H01L27/105; H01L21/3205; H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
| WO2009050833A1 | 2009-04-23 |
Foreign References:
| JP2010067942A | 2010-03-25 | |||
| JP2009218411A | 2009-09-24 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
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Claims: