NONVOLATILE MAGNETIC ELEMENT AND NONVOLATILE MAGNETIC DEVICE

WIPO Patent Application WO/2012/173279

A1

Provided is a nonvolatile magnetic device that can achieve low power consumption by writing by voltage and which has superior retention characteristics. The nonvolatile magnetic device includes a nonvolatile magnetic memory element (100). The nonvolatile magnetic memory element (100) includes: a first free layer (11) formed from a ferromagnetic body; a first insulating layer (12) formed from an insulator and provided so as to be connected to the first free layer; a charge layer (13) provided adjacent to the first insulating layer; a second insulating layer (14) formed from an insulator and provided adjacent to the charge layer; and an implantation layer (15) provided adjacent to the second insulating layer. The electrical resistivity of the charge layer (13) is smaller than the electrical resistivity of both the first insulating layer (12) and the second insulating layer (14), and the electrical resistivity of the implantation layer is smaller than the electrical resistivity of the second insulating layer.

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FUKAMI SHUNSUKE (JP)
CHIBA DAICHI (JP)

PCT/JP2012/065674

December 20, 2012

June 13, 2012

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NEC CORP (JP)
UNIV KYOTO (JP)
FUKAMI SHUNSUKE (JP)
CHIBA DAICHI (JP)

H01L43/08; H01L21/8246; H01L27/105; H01L29/82

WO2009133650A1	2009-11-05
WO2010032574A1	2010-03-25

JP2006286713A	2006-10-19
JP2003007980A	2003-01-10
JP2011124462A	2011-06-23
JP2004179219A	2004-06-24
JP2010212342A	2010-09-24

IKEDA, Noriyasu et al. (JP)
Noriyasu Ikeda (JP)

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