Title:
NONVOLATILE MEMORY CELL, RESISTANCE VARIABLE NONVOLATILE MEMORY DEVICE AND METHOD FOR DESIGNING NONVOLATILE MEMORY CELL
Document Type and Number:
WIPO Patent Application WO/2010/084774
Kind Code:
A1
Abstract:
A nonvolatile memory cell (1) is provided with an electrode (10), an electrode (20), and an oxide layer (30) arranged between the electrode (10) and the electrode (20), and in the nonvolatile memory cell, resistance varies when a voltage or a current is applied between the electrodes. When a voltage or a current is applied between the electrodes with the electrode (10) as the anode, on the interface between the electrode (10) and the oxide layer (30), the electrode (10) transfers in the direction to be away from the oxide layer (30) with the oxygen atoms adjacent to the electrode (10) in the oxide layer (30), and due to the transfer of the electrode (10) and the oxygen atoms, the magnitude of the energy gap in the oxide layer (30) varies or the state density in the vicinity of Fermi energy varies. Thus, the nonvolatile memory cell is provided with an oxide layer having a large resistance ratio between the resistance prior to applying the voltage and that after applying the voltage.
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Inventors:
KASAI, Hideaki (())
笠井秀明 (())
NAKANISHI, Hiroshi (())
笠井秀明 (())
NAKANISHI, Hiroshi (())
Application Number:
JP2010/000396
Publication Date:
July 29, 2010
Filing Date:
January 25, 2010
Export Citation:
Assignee:
OSAKA UNIVERSITY (1-1 Yamadaoka, Suita-shi Osaka, 71, 〒5650871, JP)
国立大学法人大阪大学 (〒71 大阪府吹田市山田丘１番１号 Osaka, 〒5650871, JP)
KASAI, Hideaki (())
笠井秀明 (())
国立大学法人大阪大学 (〒71 大阪府吹田市山田丘１番１号 Osaka, 〒5650871, JP)
KASAI, Hideaki (())
笠井秀明 (())
International Classes:
H01L27/10; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (Daiwa Minamimorimachi Building, 2-6 Tenjinbashi 2-chome Kita, Kita-ku, Osaka-sh, Osaka 41, 〒5300041, JP)
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