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Title:
NONVOLATILE MEMORY CELL, MEMORY CELL UNIT, INFORMATION WRITING METHOD, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2017/208653
Kind Code:
A1
Abstract:
This nonvolatile memory cell is provided with: a laminated structure 11 formed by laminating each other a storage layer 20, which stores information corresponding to the magnetization direction, and a magnetization fixing layer 30, which specifies the magnetization direction of the storage layer 20; and a heating layer 40, which heats the magnetization fixing layer 30, and controls the magnetization direction of the magnetization fixing layer 30.

Inventors:
HIGO Yutaka (1-7-1 Konan, Minato-k, Tokyo 75, 〒1080075, JP)
HOSOMI Masanori (1-7-1 Konan, Minato-k, Tokyo 75, 〒1080075, JP)
OHMORI Hiroyuki (1-7-1 Konan, Minato-k, Tokyo 75, 〒1080075, JP)
BESSHO Kazuhiro (1-7-1 Konan, Minato-k, Tokyo 75, 〒1080075, JP)
UCHIDA Hiroyuki (1-7-1 Konan, Minato-k, Tokyo 75, 〒1080075, JP)
Application Number:
JP2017/015610
Publication Date:
December 07, 2017
Filing Date:
April 18, 2017
Export Citation:
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Assignee:
SONY CORPORATION (1-7-1, Konan Minato-k, Tokyo 75, 〒1080075, JP)
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (Room 301, Akiba Building 3-2, Ohsaki 4-chome, Shinagawa-k, Tokyo 32, 〒1410032, JP)
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