Title:
NONVOLATILE MEMORY CELL, MEMORY CELL UNIT, INFORMATION WRITING METHOD, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2017/208653
Kind Code:
A1
Abstract:
This nonvolatile memory cell is provided with: a laminated structure 11 formed by laminating each other a storage layer 20, which stores information corresponding to the magnetization direction, and a magnetization fixing layer 30, which specifies the magnetization direction of the storage layer 20; and a heating layer 40, which heats the magnetization fixing layer 30, and controls the magnetization direction of the magnetization fixing layer 30.
Inventors:
HIGO YUTAKA (JP)
HOSOMI MASANORI (JP)
OHMORI HIROYUKI (JP)
BESSHO KAZUHIRO (JP)
UCHIDA HIROYUKI (JP)
HOSOMI MASANORI (JP)
OHMORI HIROYUKI (JP)
BESSHO KAZUHIRO (JP)
UCHIDA HIROYUKI (JP)
Application Number:
PCT/JP2017/015610
Publication Date:
December 07, 2017
Filing Date:
April 18, 2017
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| WO2011033873A1 | 2011-03-24 | |||
| WO2010073790A1 | 2010-07-01 | |||
| WO2009098796A1 | 2009-08-13 |
Foreign References:
| JP2012015312A | 2012-01-19 | |||
| US9218864B1 | 2015-12-22 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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