NONVOLATILE MEMORY DEVICE AND METHOD FOR CONTROLLING NONVOLATILE MEMORY DEVICE

WIPO Patent Application WO/2016/072173

A1

This nonvolatile memory device is provided with: a memory cell including a variable-resistance element, the resistance state of which varies between a first resistance state and a second resistance state, the variable-resistance element being disposed at an intersection of a first wiring and a second wiring; a writing circuit for writing data to the memory cell by causing the variable-resistance element to vary from the first resistance state to the second resistance state; and an electric current control unit for controlling an electric current flowing to the first wiring or the second wiring so that the electric current flowing to the first wiring or the second wiring is limited to a predetermined limit electric current value by the writing circuit during writing of data. The electric current control unit sets the predetermined limit electric current value to a first limit electric current value in a period before the variable-resistance element varies to the second resistance state, and changes the predetermined limit electric current value from the first limit electric current value to a second limit electric current value after the variable-resistance element varies to the second resistance state.

MORI YOTARO (JP)
KITAGAWA MAKOTO (JP)

PCT/JP2015/077437

May 12, 2016

September 29, 2015

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SONY CORP (JP)

G11C13/00

JP2011243265A	2011-12-01
US20140321194A1	2014-10-30

TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
Patent business corporation wings international patent firm (JP)

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