Title:
NONVOLATILE MEMORY DEVICE AND METHOD FOR READING SAME
Document Type and Number:
WIPO Patent Application WO/2011/159070
Kind Code:
A2
Abstract:
The present invention relates to a nonvolatile memory device. The nonvolatile memory device includes: a memory cell array including memory cells connected between first and second bit lines and a source line; a reference cell array including reference memory cells connected between first and second reference bit lines and a source line; and a read and write circuit connected to the cell array bit lines and a source line.
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Inventors:
SHIN, Hyung Soon (102-301, I-parkvill 1477-1, Seocho 3-dong, Seocho-gu, Seoul 137-868, 137-868, KR)
신형순 (서울특별시 서초구 서초3동 1477-1 아이파크빌 102동 301호, 137-868 Seoul, 137-868, KR)
신형순 (서울특별시 서초구 서초3동 1477-1 아이파크빌 102동 301호, 137-868 Seoul, 137-868, KR)
Application Number:
KR2011/004298
Publication Date:
December 22, 2011
Filing Date:
June 13, 2011
Export Citation:
Assignee:
EWHA UNIVERSITY-INDUSTRY COLLABORATION FOUNDATION (Ewha Women's Univ, 11-1 Daehyeon-dong, Seodaemun-gu, Seoul 120-750, 120-750, KR)
이화여자대학교 산학협력단 (서울특별시 서대문구 대현동 11-1 이화여자대학교, 120-750 Seoul, 120-750, KR)
SHIN, Hyung Soon (102-301, I-parkvill 1477-1, Seocho 3-dong, Seocho-gu, Seoul 137-868, 137-868, KR)
이화여자대학교 산학협력단 (서울특별시 서대문구 대현동 11-1 이화여자대학교, 120-750 Seoul, 120-750, KR)
SHIN, Hyung Soon (102-301, I-parkvill 1477-1, Seocho 3-dong, Seocho-gu, Seoul 137-868, 137-868, KR)
International Classes:
G11C16/24; G11C16/08; G11C16/26
Attorney, Agent or Firm:
KIM, In-Cheol (H&H International Patent & Law Office, 4th Fl Maegang BIdg.,1503-9 Seoch-dong, Seocho-gu, Seoul 137-070, 137-070, KR)
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Claims: