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Title:
NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/109954
Kind Code:
A3
Abstract:
Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

Inventors:
TENDULKAR, Mihir (753 Ehrhorn Avenue, Apt. 6Mountain View, California, 94041, US)
HASHIM, Imran (13620 Springhill Court, Saratoga, California, 95070, US)
WANG, Yun (1487 Lakeshore Circle, San Jose, California, 95131, US)
Application Number:
US2013/022242
Publication Date:
May 15, 2014
Filing Date:
January 18, 2013
Export Citation:
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Assignee:
KABUSHIKI KAISHA TOSHIBA (1-1 Shibaura 1-Chome, Minato-KuTokyo, Japan, 105-8001, JP)
SANDISK 3D LLC (601 McCarthy Boulevard, Milpitas, California, 95034, US)
International Classes:
H01L45/00
Domestic Patent References:
WO2011064967A12011-06-03
Foreign References:
US20100148143A12010-06-17
Attorney, Agent or Firm:
HELMS, JR., Aubrey L. (3011 North First Street, San Jose, California, 95134, US)
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