NONVOLATILE MEMORY DEVICE

WIPO Patent Application WO/2012/056689

A1

A nonvolatile memory device (800) comprises a resistance changing nonvolatile memory element (100), and a control circuit (810). The control circuit (810) determines whether or not the resistance value of the nonvolatile memory element (100) in a high resistance state is a predetermined threshold value or greater. Furthermore, in a case where the resistance value of the nonvolatile memory element (100) in a high resistance state is smaller than the threshold value, the control circuit (810) causes the nonvolatile memory element (100) to change from the high resistance state to a low resistance state by applying a first voltage (VL1) to the nonvolatile memory element (100). Furthermore, in a case where the resistance value of the nonvolatile memory element (100) in the high resistance state is the threshold value or greater, the control circuit (810) causes the nonvolatile memory element (100) to change from the high resistance state to the low resistance state by applying a second voltage (VL2) with an absolute value smaller than the first voltage (VL1) to the nonvolatile memory element (100).

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KANZAWA YOSHIHIKO
TAKAGI TAKESHI

PCT/JP2011/005974

May 03, 2012

October 26, 2011

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PANASONIC CORP (JP)
KANZAWA YOSHIHIKO
TAKAGI TAKESHI

G11C13/00; H01L27/105; H01L45/00; H01L49/00

WO2009034687A1

2009-03-19

JP2006140412A	2006-06-01
JP2005050424A	2005-02-24

NII, Hiromori (JP)
New house Extensive 守 (JP)

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