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Title:
NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2008/059701
Kind Code:
A9
Abstract:
This invention provides a nonvolatile memory element comprising a first electrode (103), a second electrode (105), and a resistance change layer (104), provided between the first and second electrodes (103, 105), for undergoing a reversible change in resistance value based on an electrical signal applied across the first and second electrodes (103, 105). The resistance change layer (104) comprises at least a tantalum oxide TaOx wherein 0 < x < 2.5.

Inventors:
FUJII SATORU
TAKAGI TAKESHI
MURAOKA SHUNSAKU
OSANO KOICHI
SHIMAKAWA KAZUHIKO
Application Number:
PCT/JP2007/070751
Publication Date:
September 11, 2009
Filing Date:
October 24, 2007
Export Citation:
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Assignee:
PANASONIC CORP (JP)
FUJII SATORU
TAKAGI TAKESHI
MURAOKA SHUNSAKU
OSANO KOICHI
SHIMAKAWA KAZUHIKO
International Classes:
H01L27/10; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
SUMIDA, Yoshihiro et al. (JP)
Yoshihiro Tsunoda (JP)
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