NONVOLATILE MEMORY ELEMENT HAVING MULTILEVEL RESISTANCE AND CAPACITANCE MEMORY CHARACTERISTICS AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2018/174514

A1

Provided is a nonvolatile memory element characterized by having multilevel resistance and capacitance values. The nonvolatile memory element comprises: a substrate; a first electrode positioned on the substrate; a dielectric material layer which is positioned on the first electrode, the resistance and capacitance of which are changed by tunneling conductance of an electric charge following an applied voltage, which has rectification characteristics, and which comprises a dielectric material; an active layer which is positioned on the dielectric material layer, the resistance and capacitance of which are changed by an applied voltage, and which comprises a graphene oxide composite material; and a second electrode positioned on the active layer. The nonvolatile memory element is also characterized in that the same has multilevel resistance and capacitance values following the applied voltage.

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JANG JAE HYUNG (KR)
ANOOP RANI (KR)
OH SE I (KR)

PCT/KR2018/003212

September 27, 2018

March 20, 2018

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GWANGJU INST SCIENCE & TECH (KR)

H01L45/00

US20090000308A1	2009-01-01
US20120205606A1	2012-08-16
US20150036413A1	2015-02-05
US20060152963A1	2006-07-13
US20110267897A1	2011-11-03

HAN, Sang Soo (KR)

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