Title:
NONVOLATILE MEMORY ELEMENT AND ITS MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/116749
Kind Code:
A1
Abstract:
A nonvolatile memory element comprises a first electrode (2), a second electrode
(6) formed above the first electrode (2), a variable resistive film (4) which
is formed between the first electrode (2) and the second electrode (6) and whose
resistance value is increased or decreased depending on an electric pulse applied
between the electrodes (2, 6), and an interlayer insulating film (3) provided
between the first electrode (2) and the second electrode (6). In the interlayer
insulating film (3), an opening extending from its surface to the first electrode
(2) is formed. The variable resistive film (4) is formed on the inner wall surface
of the opening. The inner area of the opening formed by the variable resistive
film (4) is filled with an embedded insulating film (5).
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Inventors:
MIKAWA TAKUMI
TAKAGI TAKESHI
TAKAGI TAKESHI
Application Number:
PCT/JP2007/056424
Publication Date:
October 18, 2007
Filing Date:
March 27, 2007
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
MIKAWA TAKUMI
TAKAGI TAKESHI
MIKAWA TAKUMI
TAKAGI TAKESHI
International Classes:
H01L27/10; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| WO2004057676A2 | 2004-07-08 |
Foreign References:
| JP2006019686A | 2006-01-19 | |||
| JP2006019688A | 2006-01-19 | |||
| JP2005518665A | 2005-06-23 | |||
| JP2003303941A | 2003-10-24 | |||
| JPH0445584A | 1992-02-14 |
Attorney, Agent or Firm:
ARCO PATENT OFFICE (Bo-eki Bldg.123-1, Higashimachi, Chuo-ku,,Kobe-shi, Hyogo31, JP)
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