Title:
NONVOLATILE MEMORY ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/138646
Kind Code:
A1
Abstract:
A nonvolatile memory element is formed by a variable-resistance section and
MISFET for memory selection connected in series to the variable-resistance
section. The variable-resistance section includes: a thin film (tantalum
pentoxide film (20)) formed by a strongly correlated electron-based material
in which the outermost orbital is formed by a d electron or f electron; a first electrode
(electrode (21)) in ohmic contact with one surface of the thin film; and a second
electrode (plug (19)) in non-ohmic contact with the other surface of the thin
film. Information is stored according to the intensity of the electric resistance
value at the boundary between the thin film formed by the strongly correlated
electron-based material and the second electrode. As the strongly correlated
electron-based material and the electrode material, a material already used
in the existing silicon process or a material which can be easily introduced can
be used.
Inventors:
SAITO, Shinichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
斎藤 慎一 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地株式会社日立製作所 中央研究所内 Tokyo, 1858601, JP)
MATSUI, Yuichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
松井 裕一 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地株式会社日立製作所 中央研究所内 Tokyo, 1858601, JP)
斎藤 慎一 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地株式会社日立製作所 中央研究所内 Tokyo, 1858601, JP)
MATSUI, Yuichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
松井 裕一 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地株式会社日立製作所 中央研究所内 Tokyo, 1858601, JP)
Application Number:
JP2006/310468
Publication Date:
December 06, 2007
Filing Date:
May 25, 2006
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 1008280, JP)
SAITO, Shinichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
斎藤 慎一 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地株式会社日立製作所 中央研究所内 Tokyo, 1858601, JP)
MATSUI, Yuichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 1008280, JP)
SAITO, Shinichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
斎藤 慎一 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地株式会社日立製作所 中央研究所内 Tokyo, 1858601, JP)
MATSUI, Yuichi (Hitachi Ltd., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 1858601, JP)
International Classes:
H01L27/10; H01L49/02
Attorney, Agent or Firm:
TSUTSUI, Yamato (Tsutsui & Associates, 6th Floor Kokusai Chusei Kaikan,14, Gobancho, Chiyoda-ku, Tokyo 76, 1020076, JP)
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