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Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2009/089612
Kind Code:
A8
Abstract:
A nonvolatile memory having a non-power of two memory capacity is disclosed. The nonvolatile memory device includes at least one plane. The plane includes a plurality of blocks with each of the blocks divided into a number of pages and each of the blocks defined along a first dimension by a first number of memory cells for storing data, and along a second dimension of by a second number of memory cells for storing data. The nonvolatile memory has a non-power of two capacity proportionally related to a total number of memory cells in said plane. The nonvolatile memory also includes a plurality of row decoders. An at least substantially one-to-one relationship exists, in the memory device, for number of row decoders to number of pages. Each of the row decoders is configured to facilitate a read operation on an associated page of the memory device.

Inventors:
KIM JIN-KI (CA)
HAMMOND DANIEL ALBERT (CA)
Application Number:
PCT/CA2008/002206
Publication Date:
August 05, 2010
Filing Date:
December 16, 2008
Export Citation:
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Assignee:
MOSAID TECHNOLOGIES INC (CA)
KIM JIN-KI (CA)
HAMMOND DANIEL ALBERT (CA)
International Classes:
G11C8/06; G11C8/10; G11C16/08; H04L12/28
Attorney, Agent or Firm:
HAMMOND, Daniel et al. (11 Hines Road Suite 20, Kanata Ontario K2K 2X1, CA)
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