Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR REWRITING SAME
Document Type and Number:
WIPO Patent Application WO/2015/008438
Kind Code:
A1
Abstract:
The purpose of the present invention is, in a nonvolatile semiconductor storage device which allows for bidirectional rewriting on a per bit basis, to perform high-speed rewriting while improving the endurance characteristics and data holding characteristics for a memory cell. Logic circuits (203, 204) are provided in accordance with number of changes to the write state, and memory reading data (RO) is compared with given writing data (DIN) in parallel at the start of rewriting, thereby accelerating the generation of rewriting bit information indicating whether or not the data needs to be rewritten. After electrically rewriting the memory, rewriting is verified on the basis of the rewriting bit information held in internal storage circuits (205, 206), thereby preventing additional unnecessary writing into a memory cell that was rewritten.
Inventors:
ISHITOBI YURIKO
SUWA HITOSHI
SUWA HITOSHI
Application Number:
PCT/JP2014/003422
Publication Date:
January 22, 2015
Filing Date:
June 26, 2014
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
G11C13/00; G11C11/15
Foreign References:
| JP2010244607A | 2010-10-28 | |||
| JP2013084324A | 2013-05-09 | |||
| JP2013525937A | 2013-06-20 |
Attorney, Agent or Firm:
FUJII, Kentaro et al. (JP)
Fujii Kentaro (JP)
Fujii Kentaro (JP)
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