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Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND PHASE CHANGE MEMORY
Document Type and Number:
WIPO Patent Application WO/2006/046579
Kind Code:
A1
Abstract:
A phase change memory wherein phase change memory elements are highly integrated to ensure a sufficient write current and provide advantages in planar layout and operation control. A nonvolatile semiconductor storage device, in which a plurality of word lines (3) and a plurality of bit lines (4) are arranged in a matrix, comprises a selection transistor (1) provided at each of the intersections of the word lines (3) and bit lines (4); and memory element groups each comprising a predetermined number of memory elements (2) that have their respective one ends commonly connected to the selection transistor (1) and have their respective other ends connected to respective different ones of element selection lines (5) and that allow the writing and reading of information to and from them. A predetermined current is supplied via a selection transistor (1), which is to be controlled, through an element selection line (5) connected to a memory element (2) selected from a memory element group, thereby controlling the writing or reading operation of the selected memory element (2). On a semiconductor substrate, the element selection lines (5) are arranged in parallel with the bit lines (4).

Inventors:
FUJI YUKIO (JP)
ASANO ISAMU (JP)
KAWAGOE TSUYOSHI (JP)
NAKAI KIYOSHI (JP)
Application Number:
PCT/JP2005/019630
Publication Date:
May 04, 2006
Filing Date:
October 25, 2005
Export Citation:
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Assignee:
ELPIDA MEMORY INC (JP)
FUJI YUKIO (JP)
ASANO ISAMU (JP)
KAWAGOE TSUYOSHI (JP)
NAKAI KIYOSHI (JP)
International Classes:
G11C13/00; H01L27/105
Domestic Patent References:
WO2003065377A12003-08-07
Foreign References:
JP2004206796A2004-07-22
JPH0490189A1992-03-24
JP2003257177A2003-09-12
JP2004186553A2004-07-02
JP2003323791A2003-11-14
Attorney, Agent or Firm:
Shudo, Kohei (Iwamotocho Chiyoda-ku, Tokyo 32, JP)
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