Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2006/077747
Kind Code:
A1
Abstract:
A nonvolatile semiconductor storage device capable of controlling the bidirectional currents and suppressing the parasitic currents flowing in non-selected memory cells in a cross-point array arrangement having memory cells each comprising a two-terminal circuit having a variable resistor that uses an electrical resistance change, which is caused by an electrical stress, to store information. Each of memory cells (280) comprises a series circuit constituted by both a variable resistor element (260), which is prepared by interposing a variable resistor (230) between an upper electrode (240) and a lower electrode (250), and a two-terminal element (270) though which a current can bidirectionally flow and which has a non-linear current/voltage characteristic. The two-terminal element (270) has a switching characteristic as follows: when a voltage, the absolute value of which exceeds a predetermined value, is applied across the two-terminal element (270), a current bidirectionally flows through the two-terminal element (270) in accordance with the voltage polarity; and when the absolute value of the applied voltage does not exceed the predetermined value, no current that is greater than a predetermined very-small current flows through the two-terminal element (270). Moreover, when a predetermined high voltage, the absolute value of which exceeds the predetermined value, is applied across the two-terminal element (270), a current, which has a current density of 30 kA/cm2 or more, can flow through the two-terminal element (270) in a steady manner.

Inventors:
MORIMOTO HIDENORI (JP)
Application Number:
PCT/JP2006/300040
Publication Date:
July 27, 2006
Filing Date:
January 05, 2006
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SHARP KK (JP)
MORIMOTO HIDENORI (JP)
International Classes:
H01L27/10; G11C13/00; H01L45/00; H01L49/00
Foreign References:
JP2002056666A2002-02-22
JP2004273656A2004-09-30
JP2004319587A2004-11-11
Attorney, Agent or Firm:
Masaki, Yoshifumi (3-6 Imabashi 4-chome, Chuo-k, Osaka-shi Osaka 42, JP)
Download PDF: