Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/065537
Kind Code:
A1
Abstract:
Disclosed is a nonvolatile semiconductor storage device provided with a first wiring; a second wiring that exist at positions opposed to the first wiring; and a variable resistance layer that exists between the first wiring and the second wiring, and that can change reversibly between a first state having a first resistivity and a second state having a second resistivity that is higher than the first resistivity, by a voltage applied via the first wiring and the second wiring, or by a current supplied via the first wiring and the second wiring. The variable resistance layer has a compound of carbon and silicon as the main ingredient thereof, and also contains hydrogen.
Inventors:
KUBOI SHUICHI (JP)
TAKATA MASAYUKI (JP)
NAKAI TSUKASA (JP)
FUKUMIZU HIROYUKI (JP)
NOJIRI YASUHIRO (JP)
OOTSUKA KENICHI (JP)
TAKATA MASAYUKI (JP)
NAKAI TSUKASA (JP)
FUKUMIZU HIROYUKI (JP)
NOJIRI YASUHIRO (JP)
OOTSUKA KENICHI (JP)
Application Number:
PCT/JP2010/071267
Publication Date:
June 03, 2011
Filing Date:
November 29, 2010
Export Citation:
Assignee:
TOSHIBA KK (JP)
KUBOI SHUICHI (JP)
TAKATA MASAYUKI (JP)
NAKAI TSUKASA (JP)
FUKUMIZU HIROYUKI (JP)
NOJIRI YASUHIRO (JP)
OOTSUKA KENICHI (JP)
KUBOI SHUICHI (JP)
TAKATA MASAYUKI (JP)
NAKAI TSUKASA (JP)
FUKUMIZU HIROYUKI (JP)
NOJIRI YASUHIRO (JP)
OOTSUKA KENICHI (JP)
International Classes:
H01L27/105; H01L45/00; H01L49/00
Foreign References:
| JP2009135291A | 2009-06-18 | |||
| JP2008118108A | 2008-05-22 | |||
| JP2010050411A | 2010-03-04 |
Attorney, Agent or Firm:
HYUGAJI, MASAHIKO (JP)
Masahiko Hiugaji (JP)
Masahiko Hiugaji (JP)
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