Title:
NONVOLATILE STORAGE DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2011/086725
Kind Code:
A1
Abstract:
In a phase-change memory formed in a memory matrix, heat generated in the phase-change memory is prevented from being dissipated through an interlayer insulating film by forming a void having lower heat conductivity than that of the interlayer insulating film between upper electrode films adjacent to each other and between lower electrode films adjacent to each other, thereby making it possible to efficiently heat a phase-change material film by an electric current lower than in the prior arts.
Inventors:
MORIYA HIROSHI (JP)
SASAGO YOSHITAKA (JP)
SASAGO YOSHITAKA (JP)
Application Number:
PCT/JP2010/064175
Publication Date:
July 21, 2011
Filing Date:
August 23, 2010
Export Citation:
Assignee:
HITACHI LTD (JP)
MORIYA HIROSHI (JP)
SASAGO YOSHITAKA (JP)
MORIYA HIROSHI (JP)
SASAGO YOSHITAKA (JP)
International Classes:
H01L27/105; H01L45/00
Foreign References:
| JP2009267219A | 2009-11-12 | |||
| US6815704B1 | 2004-11-09 | |||
| JP2007194426A | 2007-08-02 | |||
| JP2003303941A | 2003-10-24 | |||
| JP2010040820A | 2010-02-18 |
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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Claims: