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Patent Searching and Data


Title:
NONVOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/145736
Kind Code:
A1
Abstract:
This nonvolatile storage device is provided with: a memory cell array (10) having a plurality of memory cells (11), each of which is configured of a first variable resistance element (141) and a first current control element (142); and a parameter generating circuit (20) having an evaluation cell (21) configured of a second variable resistance element (241), and a second current control element (242) that has voltage characteristics with current density equal to that of the first current control element (142). On the side surface of the second variable resistance element (241), a conductive short-circuiting layer (151) for short-circuiting between the electrodes is provided.

Inventors:
KAWASHIMA, Yoshio
HAYAKAWA, Yukio
MIKAWA, Takumi
Application Number:
JP2013/002082
Publication Date:
October 03, 2013
Filing Date:
March 27, 2013
Export Citation:
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Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
International Classes:
H01L27/105; H01L27/10; H01L45/00; H01L49/00
Foreign References:
JP2011198407A
JP2009099199A
JP2010049776A
Attorney, Agent or Firm:
NII, Hiromori (6F Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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