Title:
NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING NONVOLATILE STORAGE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/066787
Kind Code:
A1
Abstract:
Provided is a nonvolatile storage element with which deterioration of the oxygen concentration profile of a variable resistance layer due to the thermal budget can be suppressed, and which is capable of stable operation at a low voltage; also provided is a method for manufacturing the same. The nonvolatile storage element (12) is equipped with a first electrode layer (105) formed on a substrate (100), a variable resistance layer (106) arranged on the first electrode layer (105), and a second electrode layer (107) arranged on the variable resistance layer (106). The variable resistance layer (106) has a two layer structure formed by stacking an oxygen-nitrogen-deficient tantalum oxynitride layer (106a) and a tantalum oxide layer (106b).
Inventors:
NINOMIYA TAKEKI
MIKAWA TAKUMI
HAYAKAWA YUKIO
MIKAWA TAKUMI
HAYAKAWA YUKIO
Application Number:
PCT/JP2011/006451
Publication Date:
May 24, 2012
Filing Date:
November 18, 2011
Export Citation:
Assignee:
PANASONIC CORP (JP)
NINOMIYA TAKEKI
MIKAWA TAKUMI
HAYAKAWA YUKIO
NINOMIYA TAKEKI
MIKAWA TAKUMI
HAYAKAWA YUKIO
International Classes:
H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| WO2009157479A1 | 2009-12-30 | |||
| WO2010038423A1 | 2010-04-08 |
Foreign References:
| JP2009021524A | 2009-01-29 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
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Claims: