Title:
NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/090404
Kind Code:
A1
Abstract:
A nonvolatile storage element of the present invention is provided with a variable resistance element (104a), which has: a first electrode layer (103); a second electrode layer (105); and a variable resistance layer (104), which is disposed between the first electrode layer (103) and the second electrode layer (105), and which has a resistance value reversibly varied on the basis of electrical signals applied to between the first electrode layer (103) and the second electrode layer (105). The variable resistance element is also provided with a fixed resistance layer (108), which has a predetermined resistance value, and which is laminated on the variable resistance layer (104). The variable resistance layer (104) has an oxygen-deficient first transition metal oxide layer (106), and a second transition metal oxide layer (107), which has an oxygen content rate higher than that of the first transition metal oxide layer (106), and the predetermined resistance value is 70-1,000 Ω.
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Inventors:
YONEDA, Shinichi (())
米田 慎一 (())
米田 慎一 (())
Application Number:
JP2011/006912
Publication Date:
July 05, 2012
Filing Date:
December 12, 2011
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
YONEDA, Shinichi (())
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
YONEDA, Shinichi (())
International Classes:
H01L27/105; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
NII, Hiromori (6F Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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Claims: