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Patent Searching and Data


Title:
NOVEL HETEROJUNCTION AVALANCHE PHOTODIODE
Document Type and Number:
WIPO Patent Application WO/2019/148510
Kind Code:
A1
Abstract:
A heterojunction avalanche photodiode, comprising a substrate (101), a firs epitaxial layer (102), a second epitaxial layer (103), a third epitaxial layer (104), and a fourth epitaxial layer (105). The fourth epitaxial layer (105) is formed on the third epitaxial layer (104) by means of heteroepitaxial growth; a first doped area (111) is formed on the first epitaxial layer (102), and the first doped area (111) comprises a dopant of a first doping type; a first electrode contact area (112) is formed on the first epitaxial layer (102), and the first electrode contact area (112) comprises a dopant of the first doping type; a second doped area (113) is formed on the second epitaxial layer (103), and the second doped area (113) comprises a dopant of the first doping type; a patterned anti-electric field penetration protection layer (116) is formed on a top area of the third epitaxial layer (104), and the patterned anti-electric field penetration protection layer (116) comprises a dopant of a second doping type having a first doping amount; an electric field penetration through hole array area (117) is formed on the top area of the third epitaxial layer (104), and the electric field penetration through hole array area (117) comprises a dopant of the second doping type having a second doping amount. The photodiode can reduce the dark current of a device and improve the detection sensitivity.

Inventors:
SHI TUO (CN)
Application Number:
PCT/CN2018/075345
Publication Date:
August 08, 2019
Filing Date:
February 06, 2018
Export Citation:
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Assignee:
ZVISION TECH CO LTD (CN)
International Classes:
H01L31/107
Foreign References:
CN207705218U2018-08-07
US20120326259A12012-12-27
US20140186991A12014-07-03
US20150028443A12015-01-29
US20110031578A12011-02-10
CN105720129A2016-06-29
Attorney, Agent or Firm:
BEIJING JWT INTELLECTUAL PROPERTY CO., LTD. (CN)
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