Title:
NOVEL NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/079991
Kind Code:
A1
Abstract:
The present invention relates to a novel non-volatile memory and a manufacturing method therefor. The novel non-volatile memory comprises a selection transistor and a storage transistor, and the selection transistor comprises a gate oxide layer and a first logic gate. The novel non-volatile memory of another structure comprises a storage transistor, and the storage transistor comprises a tunneling dielectric layer, a floating gate, a second inter-gate dielectric layer, and a second logic gate which are sequentially provided. According to the memory of the present invention, by replacing a conventional control gate with the logic gate, the manufacturing process of the memory is simpler, the use number of photomasks is reduced, and the manufacturing cost is further reduced.
Inventors:
NING DAN (CN)
NI HONGSONG (CN)
WANG MING (CN)
NI HONGSONG (CN)
WANG MING (CN)
Application Number:
PCT/CN2017/107594
Publication Date:
May 02, 2019
Filing Date:
October 25, 2017
Export Citation:
Assignee:
CHENGDU ANALOG CIRCUIT TECH INC (CN)
International Classes:
H01L27/105
Foreign References:
| CN1674289A | 2005-09-28 | |||
| CN1591873A | 2005-03-09 | |||
| CN1534785A | 2004-10-06 | |||
| US20110298032A1 | 2011-12-08 |
Attorney, Agent or Firm:
BEIJING LINGZHUAN IP AGENCY CO., LTD. et al. (CN)
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