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Patent Searching and Data


Title:
NOVOLAC-RESIN-CONTAINING COMPOSITION FOR FORMING RESIST UNDERLAYER FILM USING BISPHENOL ALDEHYDE
Document Type and Number:
WIPO Patent Application WO/2014/185335
Kind Code:
A1
Abstract:
[Problem] To provide a composition for forming a resist underlayer film, for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance and realizes good planarization properties or embedding properties with respect to a level difference or a relief part. [Solution] A composition for forming a resist underlayer film, including a resin obtained by reacting an organic compound (A) including an aromatic ring, and an aldehyde (B) having a structure which has at least two aromatic carbon ring groups having a phenolic hydroxy group and in which the aromatic carbon ring groups are bonded via a tertiary carbon atom. The aldehyde (B) is represented by formula (1), where Ar1 and Ar2 each represent a C6-C40 aryl group. The obtained resin is represented by formula (2). The organic compound (A) including an aromatic ring is an aromatic amine or a compound containing a phenolic hydroxy group. A solvent is further included. An acid and/or an acid generator, and a crosslinking agent are further included. A resist pattern formation method used to manufacture a semiconductor, including a step for applying, on a semiconductor substrate, the composition for forming a resist underlayer film, firing the applied composition, and forming an underlayer film.

Inventors:
ENDO TAKAFUMI (JP)
HASHIMOTO KEISUKE (JP)
NISHIMAKI HIROKAZU (JP)
SAKAMOTO RIKIMARU (JP)
Application Number:
PCT/JP2014/062352
Publication Date:
November 20, 2014
Filing Date:
May 08, 2014
Export Citation:
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Assignee:
NISSAN CHEMICAL IND LTD (JP)
International Classes:
G03F7/11; C08G14/073; G03F7/26; H01L21/027
Foreign References:
JP2012145897A2012-08-02
JPH07268049A1995-10-17
JP2012098431A2012-05-24
JPH05125149A1993-05-21
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)
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