OPERATION METHOD OF RESISTIVE RANDOM ACCESS MEMORY AND RESISTIVE RANDOM ACCESS MEMORY DEVICE

WIPO Patent Application WO/2017/124873

A1

An operation method of a resistive random access memory and a resistive random access memory device. The method comprises the following steps: applying an initial reset voltage to a memory cell in a resistive random access memory array; performing a read verify operation to acquire a resistance value of the memory cell; determining whether the resistance value of the memory cell reaches a preset target resistance value; if the resistance value of the memory cell is greater than or equal to the target resistance value, then ending the method; and if the resistance value of the memory cell is less than the target resistance value, then applying a setting voltage to the memory cell to set the memory cell to the target resistance value of a low resistance state, applying a reset voltage having an increased magnitude to the memory cell again, and repeating the steps of and after the read verify operation until the memory cell reaches the target resistance value. The present invention can alleviate a fast relaxation phenomenon of a resistive random access memory in a high resistance state.

WANG CHEN (CN)
WU HUAQIANG (CN)
QIAN HE (CN)
GAO BIN (CN)

PCT/CN2016/111401

July 27, 2017

December 22, 2016

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UNIV TSINGHUA (CN)

G11C13/00

CN105719691A	2016-06-29
CN103366816A	2013-10-23
CN104778968A	2015-07-15
CN101118784A	2008-02-06
CN102420014A	2012-04-18
US20140140125A1	2014-05-22

LIU, SHEN & ASSOCIATES (CN)

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