ELECTRICAL FIELD

RELATED APPLICATIONS

[0001] This Application is a continuation of U.S. Patent Application serial number

12/380,016, filed on February 19, 2009, entitled "Optical Device Having Light Sensor Employing Horizontal Electrical Field," and incorporated herein in its entirety.

FIELD

[0002] The present invention relates to optical devices and more particularly to devices having a light sensor.

BACKGROUND

[0003] The use of optical and/or optoelectronic devices is increasing in communications applications. These devices often include light sensors that receive light signals from a waveguide. These light sensors often employ a light absorbing material that absorbs light signals. During operation of the light sensor, an electrical field is applied across the light absorbing material. When the light absorbing material absorbs a light signal, an electrical current flows through the light absorbing material. As a result, the level of electrical current through the light absorbing material indicates the intensity of light signals being received by the light absorbing material.

[0004] These waveguides that are present on optical and/or optoelectronic devices are often made of silicon. Because silicon does not absorb the light signals having the wavelengths that are used in communications applications, silicon is often not effective for use as the light absorbing medium in the light sensors for communications application. In contrast, germanium is a material that can absorb these light signals and is accordingly often used as the light absorbing medium in the light sensors for communications application. [0005] These light sensors have been able to achieve adequate speeds when the waveguides have a cross-section with sub-micron dimensions. However, these light sensor are associated with undesirably high optical loss when used with waveguides having these dimensions. Further, the waveguides used in many communications applications employ larger waveguides. When these light sensors are used with larger waveguides, they are undesirably slow and are often associated with undesirable levels of dark current. [0006] For the above reasons, there is a need for light sensors that are suitable for use with larger waveguides.

SUMMARY

[0007] An optical device includes a waveguide on a base. The device also includes a light sensor on the base. The light sensor includes a light-absorbing medium configured to receive a light signal from the waveguide. The light sensor also includes field sources for generating an electrical field in the light-absorbing medium. The field sources are configured so the electrical field is substantially parallel to the base.

[0008] In one embodiment of the optical device, the waveguide is configured to guide a light signal through a light-transmitting medium. Additionally, the light-absorbing medium has lateral sides that each extends between a top side and a bottom side with the bottom side being between the base and the top side. The light-absorbing medium is configured to receive at least a portion of the light signal from the light-transmitting medium in the waveguide. The light-transmitting medium and the light-absorbing medium being different materials. The light sensor also includes field sources configured to serve as sources of an electrical field in the light absorbing medium. The field sources each contact one of the lateral sides and the lateral sides that are contacted by the field sources are on opposing sides of the light-absorbing medium.

BRIEF DESCRIPTION OF THE FIGURES

[0009] Figure IA through Figure ID illustrate an optical device having a light sensor configured to receive light signals from a waveguide. The light sensor includes field sources that are configured to generate a substantially horizontal electrical field in a light-absorbing medium. Figure IA is a perspective view of the device. The device illustrated in Figure IA through Figure ID employs doped regions of the light-absorbing medium as the field sources. [0010] Figure IB is a cross-section of the device shown in Figure IA taken along the line labeled B.

[0011] Figure 1C is a cross-section of the device shown in Figure IA taken along the line labeled C.

[0012] Figure ID is a cross-section of the optical device shown in Figure 1C taken along the line labeled C and extending parallel to the longitudinal axis of the waveguide. [0013] Figure 2 A is a cross-section of a light sensor that employs electrical conductors as field sources. [0014] Figure 2B is a cross-section of a light sensor that employs electrical conductors as field sources. The electrical conductors are elevated above the height of the electrical conductors shown in Figure 2A.

[0015] Figure 3 is a topview of an optical device where the waveguide includes a horizontal taper.

[0016] Figure 4A through Figure 12C illustrate a method of generating an optical device constructed according to Figure IA through Figure 1C.

[0017] Figure 13A through Figure 16B illustrate a method of generating an optical device constructed according to Figure 2B.

DESCRIPTION

[0018] The optical device includes a light transmitting medium on a base. The device also includes a waveguide configured to guide a light signal through the light-transmitting medium. The optical device also includes a light sensor configured to receive the light signal from the waveguide. The light sensor includes a light-absorbing medium positioned such that a seed portion of the light-transmitting medium is between the light-absorbing medium and the base. The light-absorbing medium can be grown on the seed portion of the light-transmitting medium.

[0019] The light sensor includes field sources in contact with the light-absorbing medium. During operation of the light sensor, the field sources are employed to form an electrical field in the light-absorbing medium. The field sources are arranged such that the resulting electrical field is substantially parallel to the base or is substantially horizontal. For instance, the field sources can be positioned on the lateral sides of the light-absorbing medium. Since the electrical field is substantially parallel to the base, the electrical field is also substantially parallel to an interface between the seed portion of the light-transmitting medium and the light-absorbing medium. The interaction between the electrical field and this interface is a source of dark current in the light sensor. As a result, forming the electrical field parallel to this interface reduces dark current in the light sensor.

[0020] Additionally, the width of the waveguide can be tapered before the light signal enters the light-absorbing medium. As a result, the light-absorbing medium can have a width that is smaller than the width of the waveguide. The reduced width increases the speed of the light sensor. Accordingly, even when used with waveguide sizes that are common in communications applications, the light sensor can have desirable levels of speed and dark current while also having the reduced optical loss associated with larger waveguides. [0021] Figure IA through Figure ID illustrate an optical device having a light sensor configured to receive light signals from a waveguide. Figure IA is a perspective view of the device. Figure IB is a cross-section of the light sensor. For instance, Figure IB is a cross-section of the device shown in Figure IA taken along the line labeled B. Figure 1C is a cross-section of the waveguide. For instance, Figure 1C is a cross-section of the device shown in Figure IA taken along the line labeled C. Figure ID is a cross-section of the optical device shown in Figure 1C taken along the line labeled C and extending parallel to the longitudinal axis of the waveguide.

[0022] The device is within the class of optical devices known as planar optical devices. These devices typically include one or more waveguides immobilized relative to a substrate or a base. The direction of propagation of light signals along the waveguides is generally parallel to a plane of the device. Examples of the plane of the device include the top side of the base, the bottom side of the base, the top side of the substrate, and/or the bottom side of the substrate.

[0023] The illustrated device includes lateral sides 10 (or edges) extending from a top side 12 to a bottom side 14. The propagation direction of light signals along the length of the waveguides on a planar optical device generally extend through the lateral sides 10 of the device. The top side 12 and the bottom side 14 of the device are non-lateral sides. [0024] The device includes one or more waveguides 16 that carry light signals to and/or from optical components 17. Examples of optical components 17 that can be included on the device include, but are not limited to, one or more components selected from a group consisting of facets through which light signals can enter and/or exit a waveguide, entry/exit ports through which light signals can enter and/or exit a waveguide from above or below the device, multiplexers for combining multiple light signals onto a single waveguide, demultiplexers for separating multiple light signals such that different light signals are received on different waveguides, optical couplers 36, optical switches, lasers that act a source of a light signal, amplifiers for amplifying the intensity of a light signal, attenuators for attenuating the intensity of a light signal, modulators for modulating a signal onto a light signal, light sensors 29 that convert an light signal to an electrical signal, and vias that provide an optical pathway for a light signal traveling through the device from the bottom side 14 of the device to the top side 12 of the device. Additionally, the device can optionally, include electrical components. For instance, the device can include electrical connections for applying a potential or current to a waveguide and/or for controlling other components on the optical device. [0025] The waveguide 16 is defined in a light-transmitting medium 18 positioned on a base 20. The light-transmitting medium 18 includes a ridge 22 defined by trenches 24 extending partially into the light-transmitting medium 18 or through the light-transmitting medium 18. Suitable light- transmitting media include, but are not limited to, silicon, polymers, silica, SiN, GaAs, InP and LiNbO ₃ . A fourth light-transmitting medium 26 is optionally positioned on the light-light transmitting medium. The fourth light-transmitting medium 26 can serve as a cladding for the waveguide 16 and/or for the device. When the light-transmitting medium 18 is silicon, suitable fourth light-transmitting media 26 include, but are not limited to, silicon, polymers, silica, SiN, GaAs, InP and LiNbO ₃ . [0026] The portion of the base 20 adjacent to the light-transmitting medium 18 is configured to reflect light signals from the waveguide 16 back into the waveguide 16 in order to constrain light signals in the waveguide 16. For instance, the portion of the base 20 adjacent to the light-transmitting medium 18 can be an optical insulator 27 with a lower index of refraction than the light-transmitting medium 18. The drop in the index of refraction can cause reflection of a light signal from the light-transmitting medium 18 back into the light- transmitting medium 18. The base 20 can include the optical insulator 27 positioned on a substrate 28. As will become evident below, the substrate 28 can be configured to transmit light signals. For instance, the substrate 28 can be constructed of a light-transmitting medium 18 that is different from the light-transmitting medium 18 or the same as the light- transmitting medium 18. In one example, the device is constructed on a silicon-on- insulator wafer. A silicon-on-insulator wafer includes a silicon layer that serves as the light- transmitting medium 18. The silicon-on-insulator wafer also includes a layer of silica positioned on a silicon substrate. The layer of silica can serving as the optical insulator 27 and the silicon substrate can serve as the substrate 28.

[0027] The optical device also includes a light sensor 29 configured to receive a light signal guided by the one or more waveguides 16. The light sensor 29 is configured to convert the light signal to an electrical signal. Accordingly, the light signal can be employed to detect receipt of light signals. For instance, the light sensor 29 can be employed to measure the intensity of a light signal and/or power of a light signal. Although Figure IA illustrates a waveguide 16 carrying the light signal between the one or more components and the light sensor 29, the device can be constructed such that the waveguide 16 carries the light signal directly from an optical fiber to the light sensor 29.

[0028] A suitable light sensor 29 includes a light-absorbing medium 32 that absorbs light signals. The light-absorbing medium 32 is positioned to receives at least a portion of a light signal traveling along the waveguide 16. As is evident from Figure IA, there is an interface between a facet of the light-absorbing medium 32 and a facet of the light- transmitting medium 18. The interface can have an angle that is non-prependicular relative to the direction of propagation of light signals through the waveguide at the interface. In some instances, the interface is substantially perpendicular relative to the base while being non- perpendicular relative to the direction of propagation. The non-perpendicularity of the interface reduces the effects of back reflection. Suitable angles for the interface relative to the direction of propagation include but are not limited to, angles between 80° and 89°, and angles between 80° and 85°.

[0029] The light-absorbing medium 32 of the light sensor 29 is positioned on a seed portion 34 of the light-transmitting medium 18. The seed portion 34 of the light-transmitting medium 18 is positioned on the base. In particular, the seed portion 34 of the light- transmitting medium 18 is positioned on the insulator. The seed portion 34 of the light- transmitting medium 18 can be continuous with the light-transmitting medium 18 included in the waveguide 16 or spaced apart from the waveguide 16. When the light signal enters the light sensor, a portion of the light signal can enter the seed portion 34 of the light-transmitting medium and another portion of the light signal enters the light-absorbing medium 32. Accordingly, the light-absorbing medium can receive only a portion of the light signal. In some instances, the light sensor can be configured such that the light-absorbing receives the entire light signal.

[0030] During the fabrication of the device, the seed portion 34 of the light- transmitting medium 18 can be used to grow the light-absorbing medium 32. For instance, when the light-transmitting medium 18 is silicon and the light-absorbing medium 32 is germanium, the germanium can be grown on the silicon. As a result, the use of the light-transmitting medium 18 in both the waveguides 16 and as a seed layer for growth of the light-absorbing medium 32 can simplify the process for fabricating the device. [0031] During operation of the light sensor 29, an electrical field is applied across the light-absorbing medium 32. When the light-absorbing medium 32 absorbs a light signal, an electrical current flows through the light-absorbing medium 32. As a result, the level of electrical current through the light-absorbing medium 32 indicates receipt of a light signal. Additionally, the magnitude of the current can indicate the power and/or intensity of the light signal. Different light-absorbing medium 32 can absorb different wavelengths and are accordingly suitable for use in a sensor 29 depending on the function of the sensor 29. A light-absorbing medium 32 that is suitable for detection of light signals used in communications applications include, but are not limited to, germanium, silicon germanium, silicon germanium quantum well, GaAs, and InP. Germanium is suitable for detection of light signals having wavelengths in a range of 1300 nm to 1600 nm. [0032] The light sensor can be configured to apply an electric field to the light- absorbing medium 32 that is substantially parallel to the base. For instance, the light-absorbing medium 32 can include lateral sides that connect a bottom side and a top side. The bottom side is located between the top side and the base. In some instances, the lateral sides are substantially perpendicular relative to the base. The lateral sides of the light- absorbing medium 32 can include doped regions. As is evident from Figure IB, each of the doped regions can up to the top side of the light-absorbing medium 32. [0033] Each of the doped regions can be an N-type doped regions or a P-type doped region. For instance, each of the N-type doped regions can include an N-type dopant and each of the P-type doped regions can include a P-type dopant. In some instances, the light- absorbing medium 32 includes a doped region that is an N-type doped region and a doped region that is a P-type doped region. The separation between the doped regions 50 in the light-absorbing medium 32 results in the formation of PIN (p-type region-insulator-n-type region) junction in the light sensor 29.

[0034] In the light absorbing medium, suitable dopants for N-type regions include, but are not limited to, phosphorus and/or arsenic. Suitable dopants for P-type regions include, but are not limited to, boron. A suitable concentration for the P-type dopant in a P-type doped region includes, but is not limited to, concentrations greater than IxIO ¹⁵ cm ^"3 , IxIO ¹⁷ cm ^'3 , or IxIO ¹⁹ cm ^"3 , and/or less than IxIO ¹⁷ cm ^"3 , IxIO ¹⁹ cm ^"3 , or IxIO ²¹ cm ^"3 . A suitable concentration for the N-type dopant in an N-type doped region includes, but is not limited to, concentrations greater than 1x10 ¹⁵ cm ^"3 , 1x10 ¹⁷ cm ^'3 , or 1x10 ¹⁹ cm ^"3 , and/or less than IxIO ¹⁷ cm ^"3 , IxIO ¹⁹ cm ^"3 , or IxIO ²¹ cm ^"3 .

[0035] The light-abosrbing medium 18 also includes doped regions. Each doped region in the light-abosrbing medium 18 contacts one of the doped regions in the light-absorbing medium 32. The doped region in the insulator is the same type of doped region as the doped region that is contacted in the light- absorb ing medium 32. For instance, when a doped region in the light-absorbing medium 32 is a P-type region, that doped region contacts a P-type doped region in the insulator. As a result, in some instances, one of the doped regions in the light-abosrbing medium 18 is a P-type doped region and one of the doped regions in the light- abosrbing medium 18 is an N-type doped region. [0036] In the insulator, suitable dopants for N-type regions include, but are not limited to, phosphorus and/or arsenic. Suitable dopants for P-type regions include, but are not limited to, boron. A suitable concentration for the P-type dopant in a P-type doped region includes, but is not limited to, concentrations greater than IxIO ¹⁵ cm ^"3 , IxIO ¹⁷ cm ^'3 , or IxIO ¹⁹ cm ^"3 , and/or less than 1x10 ¹⁷ cm ^"3 , 1x10 ¹⁹ cm ^"3 , or 1x10 ²¹ cm ^'3 . A suitable concentration for the N-type dopant in an N-type doped region includes, but is not limited to, concentrations greater than IxIO ¹⁵ cm ^'3 , IxIO ¹⁷ cm ^"3 , or IxIO ¹⁹ cm ^"3 , and/or less than IxIO ¹⁷ cm ^"3 , IxIO ¹⁹ cm ^"3 , or IxIO ²¹ cm ^"3 .

[0037] Each doped region in the light-abosrbing medium 18 is in contact with an electrical conductor such as a metal. Accordingly, the each of the doped regions in the light- abosrbing medium 18 provides electrical communication between an electrical conductor and one of the doped regions in the light-absorbing medium 32. As a result, electrical energy can be applied to the electrical conductors in order to apply the electric field to the light-absorbing medium 32. As is evident from the arrows labeled E in Figure IB, the doped regions in the light-absorbing medium 32 serve as the field sources for the electrical field. As a result, the resulting electrical field is substantially parallel to the base. [0038] Rather than using doped regions in the light-absorbing medium as the field sources, electrical conductors such as metal can be used as the field sources. For instance, Figure 2A is a cross-section of a light sensor that employs electrical conductors as field sources. The electrical conductors extend from the base to the top side of the light-absorbing medium. For instance, Figure 2A illustrates the electrical conductors extend from the insulator to the top side of the light-absorbing medium. The seed portion of the light-transmitting medium 18 is between the base and the light-absorbing medium. [0039] As is evident from Figure 2A, the electrical conductors can contact the base.

However, the electrical conductors can be spaced apart from the base as illustrated in Figure 2B. In Figure 2B, a spacer layer is formed on top of the light-transmitting medium 18 and against the lateral sides of the light-absorbing medium. The electrical conductors extend from the top of the spacer layer to the top side of the light-absorbing medium 32. As a result, the spacer layer elevates the bottom of the electrical conductors relative to the base. The electrical conductors are also elevated above the interface between the light-absorbing medium 32 and the seed portion 34 of the light-transmitting medium 18. The elevation of the electrical conductors reduces interaction between the resulting electrical field and the interface between the light-absorbing medium 32 and the seed portion 34 of the light- transmitting medium 18. This reduced interaction further reduces the level of dark current associated with the light sensor.

[0040] Increasing the portion of the lateral side that is contacted by the field source can increase the efficiency of the light sensor. Accordingly, as is evident in Figure IA and Figure 2A, each of the field sources can span the distance between the top of the lateral side contacted by the field source and the bottom of the lateral side contacted by the field source. In some instances, each of the field sources extends from the top of the lateral side contacted by the field source toward the base. Alternately, each of the field sources can extend toward the base from a location that is above 90% of a distance between the top of the lateral side contacted by the field source and the bottom of the lateral side contacted by the field source. In one example, each of the field sources extends toward the base from a location that is within XXX μm of a top of the lateral side contacted by that field source. [0041] As noted above, the light sensor is suitable for use with waveguide dimensions that are suitable for use in communications applications. Accordingly, a suitable height for the waveguide (labeled h in Figure 1C) includes, but is not limited to, heights greater than XXX, XXX, and XXX. A suitable width for the waveguide (labeled w in Figure 1C) includes, but is not limited to, widths greater than XXX, XXX, and XXX. Suitable waveguide dimension ratios (width of the waveguide: height of the waveguide) include, but are not limited to, ratios greater than XXX: 1, XXX: 1, and XXX: 1 and/or less that XXX: 1, XXX: 1, and XXX: 1.

[0042] The increased dimensions of the waveguide are also associated with increased dimensions of the light-absorbing medium. For instance, a suitable height for the light-absorbing medium (labeled H in Figure IB) includes, but is not limited to, heights greater than XXX, XXX, and XXX. A suitable width for the light-absorbing medium (labeled W in Figure IB) includes, but is not limited to, widths greater than XXX, XXX, and XXX. Suitable light-absorbing medium dimension ratios (width of the waveguide: height of the waveguide) include, but are not limited to, ratios greater than XXX: 1, XXX: 1, and XXX: 1 and/or less than XXX: 1, XXX: 1, and XXX: 1.

[0043] Figure 3 is a topview of an optical device where the waveguide includes a taper. The taper can be a horizontal taper and need not include a vertical taper although a vertical taper is optional. The taper is positioned before the light sensor. For instance, the horizontal taper occurs in the light-transmitting medium 18 rather than in the light-absorbing medium 32. The taper allows the light-absorbing medium to have a narrower width than the waveguide. The reduced width of the light-absorbing medium increases the speed of the light sensor. The optical component preferably excludes additional components between the taper and light sensor although other components may be present.

[0044] The optical device can be constructed using fabrication technologies that are employing in the fabrication of integrated circuits, opto-electronic circuits, and/or optical devices. For instance, the ridge 22 for the waveguide 16 and/or the seed portion 34 can be formed in the light-transmitting medium 18 using etching technologies on a silicon-on- insulator wafer. Horizontal tapers can be readily formed using masking and etching technologies. Suitable methods for forming vertical tapers are disclosed in U.S. Patent Application serial number 10/345,709, filed on January 15, 2003, entitled "Controlled Selectivity Etch for Use with Optical Component Fabrication," and incorporated herein in its entirety.

[0045] Figure 4 A through Figure 12C illustrate a method of generating an optical device constructed according to Figure IA through Figure 1C. The method is illustrated using a silicon-on-insulator wafer or chip as the starting precursor for the optical device. However, the method can be adapted to platforms other than the silicon-on-insulator platform. [0046] Figure 4A through Figure 4C illustrate a first mask is formed on the silicon-on-insulator wafer or chip to provide a device precursor. Figure 4A is a topview of the device precursor. Figure 4B is a cross-section of the device precursor shown in Figure 4A taken along the line labeled B. Figure 4C is a cross-section of the device precursor shown in Figure 4A taken along the line labeled C. The first mask leaves exposed a region of the device precursor where a sensor cavity is to be formed while protecting the remainder of the illustrated portion of the device precursor. The sensor cavity is the region of the device precursor where the light sensor is to be formed. A first etch is then performed so as to form the sensor cavity. The first etch yields the device precursor of Figure 4A through Figure 4C. The first etch is performed such that the seed portion of the light-transmitting medium remains on the base. Accordingly, the first etch is terminated before the base is reached. [0047] A suitable first mask includes, but is not limited to, a hard mask such as a silica mask. A suitable first etch includes, but is not limited to, a dry etch. [0048] As shown in Figure 5A through Figure 5C, the light-absorbing medium is formed in the sensor cavity of Figure 4 A through Figure 4C. Figure 5 A is a topview of the device precursor. Figure 5B is a cross-section of the device precursor shown in Figure 5 A taken along the line labeled B. Figure 5C is a cross-section of the device precursor shown in Figure 5 A taken along the line labeled C. When the light-transmitting medium 18 is silicon and the light-absorbing medium 32 is germanium, the germanium can be grown on the seed portion of the silicon. After formation of the light light-absorbing medium, the device precursor can be planarized to provide the device precursor of Figure 5 A through Figure 5C. [0049] The first mask can be removed from the device precursor of Figure 5 A through Figure 5C and a second mask can be formed on the device precursor so as to provide the device precursor of Figure 6A through Figure 6C. Figure 6A is a topview of the device precursor. Figure 6B is a cross-section of the device precursor shown in Figure 6A taken along the line labeled B. Figure 6C is a cross-section of the device precursor shown in Figure 6A taken along the line labeled C. The second mask is formed such that the regions where the trenches are to be formed remain exposed while protecting the remainder of the illustrated portion of the device precursor. A suitable second mask includes a hard mask such as a silica mask.

[0050] A second etch is performed on the device precursor of Figure 6A through

Figure 6C to provide the device precursor of Figure 7A through Figure 7C. Figure 7A is a topview of the device precursor. Figure 7B is a cross-section of the device precursor shown in Figure 7A taken along the line labeled B. Figure 7C is a cross-section of the device precursor shown in Figure 7A taken along the line labeled C. The second etch is stopped where the first portion of the etched material is etched to the depth desired for the trenches. Since the second etch etches the light-transmitting medium and the light-absorbing medium concurrently, the second etch etches the light-transmitting medium and the light-absorbing medium to different depths. For instance, Figure 7B illustrates the light-absorbing medium etched deeper than the light-transmitting medium. A suitable second etch includes, but is not limited to, a dry etch that can etch both the light-transmitting medium and the light-absorbing medium.

[0051] A third mask is formed on the device precursor of Figure 7A through Figure

7C as shown by the device precursor of Figure 8 A through Figure 8C. Figure 8 A is a topview of the device precursor. Although the location of the light-absorbing medium is not visible from above the device precursor of Figure 8 A, the light-absorbing medium is illustrated as a dashed line in order to show the spatial relationship between the third mask and the underlying light-absorbing medium. Figure 8B is a cross-section of the device precursor shown in Figure 8A taken along the line labeled B. Figure 8C is a cross-section of the device precursor shown in Figure 8 A taken along the line labeled C. Portions of the third mask are formed over the second mask. The third mask is formed such that the combination of the second mask and the third mask leave the trenches associated with the waveguide exposed while the remainder of the illustrated portion of the device precursor is protected. A third etch is then performed so as to provide the device precursor of Figure 8 A through Figure 8C. The third etch is performed such that the trenches associated with the waveguide and the light sensor are etched to about the same depth. As a result, the third etch corrects for the depth differential that is evident in Figure 7B and Figure 1C.

[0052] A suitable third mask includes, but is not limited to, a photoresist. A suitable third etch includes, but is not limited to, a dry etch.

[0053] The third mask is removed and doped regions are formed in the light-transmitting medium and in the light-absorbing medium so as to provide the device precursor of Figure 9A through Figure 9C. Figure 9 A is a topview of the device precursor. Figure 9B is a cross-section of the device precursor shown in Figure 9A taken along the line labeled B. Figure 9C is a cross-section of the device precursor shown in Figure 9 A taken along the line labeled C. The n-type doped regions can be generated by forming a doping mask on the device precursor so the locations of the n-type doped regions are exposed and the remainder of the illustrated portion of the device precursor is protected. High angle dopant implant processes can be employed to form the n-type doped regions. The doping mask can then be removed. The same sequence can then be employed to form the p-type doped regions. The p-type doped regions can be formed before the n-type doped regions or the n-type doped regions can be formed before the p-type doped regions.

[0054] The second mask is removed from the device precursor of Figure 9A through

Figure 9C and a first cladding is formed on the device precursor so as to provide the device precursor of Figure 1OA through Figure 1OC. Figure 1OA is a topview of the device precursor. Although the location of the light-absorbing medium is not visible from above the device precursor of Figure 1OA, the light-absorbing medium is illustrated as a dashed line in order to show the spatial relationship between features on the device precursor. Figure 1OB is a cross-section of the device precursor shown in Figure 1OA taken along the line labeled B. Figure 1OC is a cross-section of the device precursor shown in Figure 1OA taken along the line labeled C. As is evident in Figure 1OA and Figure 1OB, the first cladding is formed such that the portion of the doped regions that are to be contacted by the electrical conductors remain exposed and the remainder of the illustrated portion of the device precursor are covered by the first cladding. A suitable first cladding includes, but is not limited to, PECVD deposited silica that is subsequently patterned using photolithography. [0055] The electrical conductors are formed on the device precursor of Figure 1OA and Figure 1OC so as to provide the device precursor of Figure 1 IA through Figure 11C. Figure 1 IA is a topview of the device precursor. Although the location of the light-absorbing medium is not visible from above the device precursor of Figure 1 IA, the light-absorbing medium is illustrated as a dashed line in order to show the spatial relationship between features on the device precursor. Figure 1 IB is a cross-section of the device precursor shown in Figure 1 IA taken along the line labeled B. Figure 11C is a cross-section of the device precursor shown in Figure 1 IA taken along the line labeled C. As is evident in Figure 1 IA and Figure 1 IB, the electrical conductors can be formed so each electrical conductor extend from one of the doped regions, out of the trench, and over the light-transmitting medium. Suitable electrical conductors include metals such as titanium and aluminum. The metals can be deposited by sputtering and patterned by photolithography.

[0056] A second cladding can optionally be formed on the device precursor of Figure

1 IA through Figure 11C so as to provide the device precursor of Figure 12A through Figure 12C. Figure 12A is a topview of the device precursor. Although the location of the light-absorbing medium and the electrical conductors are not visible from above the device precursor of Figure 12 A, the light-absorbing medium and electrical conductors is illustrated by dashed lines in order to show the spatial relationship between features on the device precursor. Figure 12B is a cross-section of the device precursor shown in Figure 12A taken along the line labeled B. Figure 12C is a cross-section of the device precursor shown in Figure 12A taken along the line labeled C. As is evident in Figure 12A and Figure 12B, the second cladding can be patterned such that the second cladding defines contact pads the electrical conductors. A suitable second cladding includes, but is not limited to, PECVD deposited SiN that is subsequently patterned using photolithography. After removing photoresists formed during photolithography, the device precursor of Figure 12A through Figure 12C can be sintered to form the optical device.

[0057] The device can be used in conjunction with electronics that are in electrical communication with the contact pads. The electronics can apply electrical energy to the contact pads so as to form a reverse bias across the PIN junction in the light sensor. When the light-absorbing medium 32 receives a light signal, an electrical current flows through the light-absorbing medium 32 indicating the receipt of the light signal. [0058] Figure 13 A through Figure 16B illustrate a method of generating an optical device constructed according to Figure 2B. The method is illustrated using the device precursor of Figure 5 A through Figure 5C as the starting device precursor. [0059] The first mask can be removed from the device precursor of Figure 5 A through Figure 5C and a second mask can be formed on the device precursor as shown in Figure 13A through Figure 13C. Figure 13A is a topview of the device precursor. Figure 13B is a cross-section of the device precursor shown in Figure 13 A taken along the line labeled B. Figure 13C is a cross-section of the device precursor shown in Figure 13A taken along the line labeled C. Figure 13D is a cross-section of the device precursor shown in Figure 13A taken along the line labeled D. The second mask is formed such that the regions where trenches are to be formed remain exposed. The second mask also leaves exposed contact regions where electrical contact pads will be formed. The second mask protects the remainder of the illustrated portion of the device precursor. A suitable second mask includes a hard mask such as a silica mask.

[0060] A second etch is performed on the device precursor so as to provide the device precursor of Figure 13A through Figure 13C. The second etch is stopped where the first portion of the etched material is etched to the depth desired for the trenches. Since the second etch etches the light-transmitting medium and the light-absorbing medium concurrently, the second etch etches the light-transmitting medium and the light-absorbing medium to different depths. For instance, Figure 13B illustrates the light-absorbing medium etched deeper than the light-transmitting medium. A suitable second etch includes, but is not limited to, a dry etch that can etch both the light-transmitting medium and the light-absorbing medium.

[0061] A third mask is formed on the device precursor of Figure 13A through Figure

13D as shown by the device precursor of Figure 14A through Figure 14D. Figure 14A is a topview of the device precursor. Although the location of the light-absorbing medium is not visible from above the device precursor of Figure 14A, the light-absorbing medium is illustrated as a dashed line in order to show the spatial relationship between the third mask and the underlying light-absorbing medium. Figure 14B is a cross-section of the device precursor shown in Figure 14A taken along the line labeled B. Figure 14C is a cross-section of the device precursor shown in Figure 14A taken along the line labeled C. Figure 14D is a cross-section of the device precursor shown in Figure 14A taken along the line labeled D. The third mask is formed such that the combination of the second mask and the third mask leave the trenches associated with the waveguide exposed while the remainder of the illustrated portion of the device precursor is protected. A third etch is then performed so as to provide the device precursor of Figure 14A through Figure 14D. The third etch is performed such that the trenches associated with the waveguide and the light sensor are etched to about the same depth. As a result, the third etch corrects for the depth differential that is evident in Figure 13C and Figure 13D. [0062] The third mask is removed from the device precursor of Figure 14A through

Figurer 14D. A spacer layer is formed on the result as shown Figure 15A through Figure 15C. Figure 15A is a topview of the device precursor. Figure 15B is a cross-section of the device precursor shown in Figure 15A taken along the line labeled B. Figure 15C is a cross-section of the device precursor shown in Figure 15A taken along the line labeled C. Suitable materials for the spacer layer include, but are not limited to, PECVD deposited silica that is subsequently patterned using photolithography with a wet etch.

[0063] The electrical conductors are formed on the device precursor of Figure 15A through Figure 15C as shown in Figure 16A and Figure 16B. Figure 16A and Figure 16B are each cross sections of the device precursor. As is evident in Figure 16A and Figure 16B, the electrical conductors can be formed so each electrical conductor extends from the spacer layer to the top of a lateral side. Each electrical conductor also extends out of the trenches and into the contact regions. Suitable electrical conductors include metals such as titanium and aluminum. The metals can be deposited by sputtering and patterned by photolithography. [0064] Cladding layers and contact pads can be formed on the device precursor of

Figure 16A and Figure 16 as discussed in connection with Figure 12A through Figure 12C. The resulting contact pads can be used in conjunction with electronics as disclosed above. [0065] The method of Figure 13 A through 16B can be adapted to forming the device of Figure 2 A. For instance, the second etch and the third etch can be performed down to the level of the base and the rest of the method executed without forming the spacer layer. [0066] Other embodiments, combinations and modifications of this invention will occur readily to those of ordinary skill in the art in view of these teachings. Therefore, this invention is to be limited only by the following claims, which include all such embodiments and modifications when viewed in conjunction with the above specification and accompanying drawings.