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Title:
OPTICAL ENERGY-CROSSLINKABLE INSULATING LAYER MATERIAL FOR ORGANIC THIN FILM TRANSISTOR, OVERCOAT INSULATING LAYER, AND ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2011/158929
Kind Code:
A1
Abstract:
Disclosed is an insulating layer material for an organic thin film transistor, which enables the production of an organic thin film transistor that has a threshold voltage with a small absolute value. Specifically disclosed is an insulating layer material for an organic thin film transistor, which contains a polymer compound (A) that has a repeating unit containing a fluorine atom and another repeating unit containing a functional group that absorbs optical energy or electron beam energy and causes a dimerization reaction.

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Inventors:
YAHAGI ISAO (JP)
Application Number:
PCT/JP2011/063895
Publication Date:
December 22, 2011
Filing Date:
June 17, 2011
Export Citation:
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Assignee:
SUMITOMO CHEMICAL CO (JP)
YAHAGI ISAO (JP)
International Classes:
H01L29/786; C08F214/18; C08F216/00; H01L21/312; H01L21/768; H01L23/522; H01L51/05; H01L51/30
Domestic Patent References:
WO2010024238A12010-03-04
Foreign References:
JPS61101083A1986-05-19
JPH1160992A1999-03-05
Attorney, Agent or Firm:
TANAKA, Mitsuo et al. (JP)
Mitsuo Tanaka (JP)
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