Title:
OPTICAL MODULATOR
Document Type and Number:
WIPO Patent Application WO/2018/043317
Kind Code:
A1
Abstract:
This optical modulator is provided with: a p-type first semiconductor layer (102) that is formed on a cladding layer (101); an insulating layer (103) that is formed on the first semiconductor layer (102); and an n-type second semiconductor layer (104) that is formed on the insulating layer (103). The first semiconductor layer (102) is configured from silicon or silicon-germanium; and the second semiconductor layer (104) is configured from a group III-V compound semiconductor that is composed of three or more materials.
Inventors:
HIRAKI TATSUROU (JP)
MATSUO SHINJI (JP)
MATSUO SHINJI (JP)
Application Number:
PCT/JP2017/030468
Publication Date:
March 08, 2018
Filing Date:
August 25, 2017
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
G02F1/025
Domestic Patent References:
| WO2014155450A1 | 2014-10-02 | |||
| WO2016018285A1 | 2016-02-04 |
Foreign References:
| US20150055910A1 | 2015-02-26 | |||
| JP2007525711A | 2007-09-06 | |||
| JP2006515082A | 2006-05-18 |
Other References:
LIANG,DI ET AL.: "A Tunable Hybrid III-V-on-Si MOS Microring Resonator with Negligible Tuning Power Consumption", OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 20 March 2016 (2016-03-20), pages 1 - 3, XP032942402
HONG,TAO ET AL.: "A Selective-Area Metal Bonding InGaAsP-Si Laser", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 22, no. 15, 1 August 2010 (2010-08-01), pages 1141 - 1143, XP011310203
See also references of EP 3506001A4
HONG,TAO ET AL.: "A Selective-Area Metal Bonding InGaAsP-Si Laser", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 22, no. 15, 1 August 2010 (2010-08-01), pages 1141 - 1143, XP011310203
See also references of EP 3506001A4
Attorney, Agent or Firm:
YAMAKAWA,Shigeki et al. (JP)
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