Title:
OPTICAL PROXIMITY CORRECTION METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/197266
Kind Code:
A1
Abstract:
An optical proximity correction method and apparatus. The optical proximity correction method comprises: manufacturing a test mask plate; using the test mask plate to acquire wafer data under the current photoetching condition; using the wafer data to establish an optical proximity correction model and a process variation bandwidth model; carrying out target pattern correction according to the optical proximity correction model and the process variation bandwidth model, so as to respectively obtain a first corrected pattern and a second corrected pattern; calculating the difference between a first simulated contour of the first corrected pattern and a second simulated contour of the second corrected pattern; and adjusting a correction manner for a target pattern according to the difference. In the method, a possible variation caused by a process variation bandwidth is taken into consideration during correction, and a photoetching process window is enlarged, thereby improving the product yield.
Inventors:
CHEN HSIN-TING (CN)
Application Number:
PCT/CN2021/083594
Publication Date:
October 07, 2021
Filing Date:
March 29, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G03F1/36
Foreign References:
| US20190072845A1 | 2019-03-07 | |||
| CN110794645A | 2020-02-14 | |||
| US20150310155A1 | 2015-10-29 | |||
| US20110161895A1 | 2011-06-30 | |||
| US20170109459A1 | 2017-04-20 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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