OPTICAL PROXIMITY CORRECTION METHOD FOR CURVE PATTERN

WIPO Patent Application WO/2021/203550

A1

Disclosed is an optical proximity correction method for a curve pattern. After the optical proximity correction is performed on an imported original design pattern and before design rule checking, the curve pattern is subjected to orthogonal cutting on the edges to form standard pattern edges, with the orthogonal cutting comprising the step of using multiple edges, extending in the horizontal or vertical direction, connected to one another to fit the curve pattern edges. By means of performing orthogonal cutting on the curve pattern of a silicon optical device to form standard pattern edges, the layout pattern meets conventional optical mask standards, so as to reduce the production cost of optical masks, while also ensuring that the optical proximity correction result is close to the original pattern.

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CHEN SHIJIE (CN)
HUANG ZENGZHI (CN)
GUO JIN (CN)

PCT/CN2020/095890

October 14, 2021

June 12, 2020

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UNITED MICROELECTRONICS CENTER CO LTD (CN)

G03F1/36; G03F7/20

US6194104B1	2001-02-27
CN1771499A	2006-05-10
CN102027418A	2011-04-20
CN103336406A	2013-10-02
CN108828896A	2018-11-16
CN109491195A	2019-03-19

J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)

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