Title:
OPTICAL SCANNER USING DOUBLE SOI, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/225104
Kind Code:
A1
Abstract:
The present invention relates to an optical scanner using double silicon on insulator (SOI), and a manufacturing method therefor, the optical scanner autonomously creating a difference in height between a fixed electrode and a driving electrode without the application of an external physical force. The present invention comprises: a first comb electrode layer, which is formed of a silicon-based semiconductor material and includes a plurality of first comb electrodes arranged along the outer surface of at least one side thereof; and a second comb electrode layer, which is formed of a silicon-based semiconductor material, is stacked on the first comb electrode layer and includes a plurality of second comb electrodes alternately formed on the plurality of first comb electrodes.
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Inventors:
KIM HWANSUN (KR)
KIM HEEMIN (KR)
KIM SEIMIN (KR)
KIM YUNGOO (KR)
KIM KYUNGSU (KR)
KIM HEEMIN (KR)
KIM SEIMIN (KR)
KIM YUNGOO (KR)
KIM KYUNGSU (KR)
Application Number:
PCT/KR2021/010934
Publication Date:
October 27, 2022
Filing Date:
August 18, 2021
Export Citation:
Assignee:
TALENTIS CORP (KR)
International Classes:
G02B26/08; B81B7/02; B81C1/00; G02B26/10
Foreign References:
| KR100469062B1 | 2005-02-02 | |||
| US20080239446A1 | 2008-10-02 | |||
| US20110136283A1 | 2011-06-09 | |||
| KR20070118881A | 2007-12-18 | |||
| KR20060131087A | 2006-12-20 |
Attorney, Agent or Firm:
PARK, Chonghan (KR)
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