Title:
OPTICAL SEMICONDUCTOR COMPONENT WITH DEEP RIDGED WAVEGUIDE
Document Type and Number:
WIPO Patent Application WO1998000894
Kind Code:
A3
Abstract:
Digital optical telecommunications use optical semiconductor components which contain a transition area for the expansion of the mode field of a light wave, in order to reduce coupling losses when coupling an optical fiber or an optical waveguide of a supporting plate. An optical semiconductor component (BE1; BE2) contains a deep ridged waveguide (RIDGE) with a cover layer (DS), which are arranged on a substrate (SUB). The ridged waveguide (RIDGE) has a first (MQW) and a second (BULK) waveguide core. The first waveguide core (MQW) contains one or several optically active semiconductor layers. In a first transition area (UB1), the layer thickness of the second waveguide core (BULK) decreases along a longitudinal direction (L) of the ridged waveguide (RIDGE). This causes a light wave being conducted in the optical semiconductor component (BE1; BE2) to divert into the semiconductor material of the cover layer (DS) and the substrate (SUB) surrounding the waveguide core, thereby expanding its mode field.
More Like This:
| JPH0590706 | SEMICONDUCTOR LASER ELEMENT |
Inventors:
DUETTING KASPAR (DE)
KUEHN EDGAR (DE)
KUEHN EDGAR (DE)
Application Number:
PCT/EP1997/003585
Publication Date:
February 19, 1998
Filing Date:
June 26, 1997
Export Citation:
Assignee:
ALSTHOM CGE ALCATEL (FR)
DUETTING KASPAR (FR)
KUEHN EDGAR (FR)
DUETTING KASPAR (FR)
KUEHN EDGAR (FR)
International Classes:
H01S5/00; G02B6/122; H01S5/026; H01S5/22; G02B6/12; H01S5/34; (IPC1-7): H01S3/025
Foreign References:
| EP0641049A1 | 1995-03-01 |
Other References:
SATZKE K ET AL: "Ultrahigh-bandwidth (42 GHz) polarisation-independent ridge waveguide electroabsorption modulator based on tensile strained InGaAsP MQW", ELECTRONICS LETTERS, 9 NOV. 1995, UK, vol. 31, no. 23, ISSN 0013-5194, pages 2030 - 2032, XP002049133
BRENNER T ET AL: "COMPACT INGAASP/INP LASER DIODES WITH INTEGRATED MODE EXPANDER FOR EFFICIENT COUPLING TO FLAT-ENDED SINGLEMODE FIBRES", ELECTRONICS LETTERS, vol. 31, no. 17, 17 August 1995 (1995-08-17), pages 1443 - 1445, XP000528969
EL YUMIN S ET AL: "MONOLITHIC INTEGRATION OF GAINASP/INP COLLIMATING GRIN LENS WITH TAPERED WAVEGUIDE ACTIVE REGION", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, HOKKAIDO, MAY 9 - 13, 1995, no. CONF. 7, 9 May 1995 (1995-05-09), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 721 - 724, XP000630704
BRENNER T ET AL: "COMPACT INGAASP/INP LASER DIODES WITH INTEGRATED MODE EXPANDER FOR EFFICIENT COUPLING TO FLAT-ENDED SINGLEMODE FIBRES", ELECTRONICS LETTERS, vol. 31, no. 17, 17 August 1995 (1995-08-17), pages 1443 - 1445, XP000528969
EL YUMIN S ET AL: "MONOLITHIC INTEGRATION OF GAINASP/INP COLLIMATING GRIN LENS WITH TAPERED WAVEGUIDE ACTIVE REGION", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, HOKKAIDO, MAY 9 - 13, 1995, no. CONF. 7, 9 May 1995 (1995-05-09), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 721 - 724, XP000630704
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