Title:
OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER MODULE AND OPTICAL FIBER AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2013/151145
Kind Code:
A1
Abstract:
An optical semiconductor device which is provided with a quantum well active layer that is positioned between a p-type cladding layer and an n-type cladding layer in the thickness direction, and which emits laser light having a predetermined wavelength. This optical semiconductor device is also provided with: a separate confinement layer that is positioned between the quantum well active layer and the n-type cladding layer; and an electric field distribution control layer that is positioned between the separate confinement layer and the n-type cladding layer and is configured of two or more semiconductor layers having a band gap energy larger than the band gap energy of a barrier layer that constitutes the quantum well active layer.
Inventors:
YOSHIDA JUNJI (JP)
ITOH HIROKAZU (JP)
IRINO SATOSHI (JP)
IRIE YUICHIRO (JP)
SAWAMURA TAKETSUGU (JP)
ITOH HIROKAZU (JP)
IRINO SATOSHI (JP)
IRIE YUICHIRO (JP)
SAWAMURA TAKETSUGU (JP)
Application Number:
PCT/JP2013/060391
Publication Date:
October 10, 2013
Filing Date:
April 04, 2013
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
YOSHIDA JUNJI (JP)
ITOH HIROKAZU (JP)
IRINO SATOSHI (JP)
IRIE YUICHIRO (JP)
SAWAMURA TAKETSUGU (JP)
YOSHIDA JUNJI (JP)
ITOH HIROKAZU (JP)
IRINO SATOSHI (JP)
IRIE YUICHIRO (JP)
SAWAMURA TAKETSUGU (JP)
International Classes:
H01S5/20; G02F1/35; H01S3/30; H01S5/022; H01S5/227
Domestic Patent References:
| WO2005088791A1 | 2005-09-22 |
Foreign References:
| JP2005072402A | 2005-03-17 | |||
| JP2005191349A | 2005-07-14 | |||
| JP2004153212A | 2004-05-27 | |||
| JP2000174394A | 2000-06-23 | |||
| JPH05243669A | 1993-09-21 | |||
| JP2007220692A | 2007-08-30 | |||
| JP2013120893A | 2013-06-17 |
Attorney, Agent or Firm:
SAKAI, Hiroaki et al. (JP)
Hiroaki Sakai (JP)
Hiroaki Sakai (JP)
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