Title:
OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/240644
Kind Code:
A1
Abstract:
Provided is an optical semiconductor device which includes: a semiconductor substrate (1); a mesa portion (10) in which a first cladding layer (2), an active layer (3), and a second cladding layer (4) are formed on the semiconductor substrate (1) from the semiconductor substrate (1) side; a high resistance embedded layer (5) which is embedded at both sides of the mesa portion (10); and a contact layer (6) which is formed covering the mesa portion (10) and the high resistance embedded layer (5). The concentration of dopant in the high resistance embedded layer (5) itself in a region of the high resistance embedded layer contacting the mesa portion (10) is 1018 cm-3 or more, a second cladding layer inter-diffusion region (4B), into which the dopant from the high resistance embedded layer (5) itself has diffused, is formed in a region of the second cladding layer (4) contacting the high resistance embedded layer, and a high resistance embedded layer inter-diffusion region (5B), into which the dopant from the second cladding layer (4) itself has diffused, is formed in a region of the high resistance embedded layer (5) contacting the second cladding layer (4) and a region of the high resistance embedded layer (5) contacting the active layer (3).
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Inventors:
NAKAI EIJI (JP)
Application Number:
PCT/JP2019/020828
Publication Date:
December 03, 2020
Filing Date:
May 27, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/227
Foreign References:
| JP2001352131A | 2001-12-21 | |||
| JPH08162701A | 1996-06-21 | |||
| JPH06275911A | 1994-09-30 | |||
| JPH10178236A | 1998-06-30 | |||
| JPH07202317A | 1995-08-04 | |||
| JP2003060311A | 2003-02-28 | |||
| US20040062467A1 | 2004-04-01 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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