Title:
OPTICAL AND THERMAL ENERGY CROSSLINKABLE INSULATING LAYER MATERIAL FOR ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2011/062093
Kind Code:
A1
Abstract:
Disclosed is an insulating layer material for an organic thin film transistor, which enables the production of an organic thin film transistor that has a threshold voltage of a small absolute value and low hysteresis. Specifically disclosed is a gate insulating layer material for an organic thin film transistor, which contains: (A) a polymer compound that has a repeating unit having a group that contains a fluorine atom, a repeating unit having a photodimerization reactive group, and a repeating unit having a first functional group that produces a second functional group that is reactive with active hydrogen by the action of an electromagnetic wave or heat; and an active hydrogen compound (B).
Inventors:
YAHAGI ISAO (JP)
Application Number:
PCT/JP2010/069968
Publication Date:
May 26, 2011
Filing Date:
November 10, 2010
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
YAHAGI ISAO (JP)
YAHAGI ISAO (JP)
International Classes:
H01L29/786; C08G18/80; C08K5/00; C08L25/08; C08L33/14; H01L21/312; H01L21/336; H01L51/05; H01L51/30
Foreign References:
| JP2007042852A | 2007-02-15 | |||
| JP2006028497A | 2006-02-02 | |||
| JPH08231675A | 1996-09-10 | |||
| JP2006303465A | 2006-11-02 |
Attorney, Agent or Firm:
TANAKA, Mitsuo et al. (JP)
Mitsuo Tanaka (JP)
Mitsuo Tanaka (JP)
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