Invention Title

Organic compound of formula (I) for use in organic electronic devices, an organic electronic device comprising a compound of formula (I) and a display device comprising the organic electronic device

Technical Field

The present invention relates to an organic compound of formula (I) for use in organic electronic devices, an organic electronic device comprising a compound of formula (I) and a display device comprising the organic electronic device

Background Art

Organic electronic devices, such as organic light-emitting diodes OLEDs, which are self- emitting devices, have a wide viewing angle, excellent contrast, quick response, high brightness, excellent operating voltage characteristics, and color reproduction. A typical OLED comprises an anode, a hole transport layer HTL, an emission layer EML, an electron transport layer ETL, and a cathode, which are sequentially stacked on a substrate. In this regard, the HTL, the EML, and the ETL are thin films formed from organic compounds.

When a voltage is applied to the anode and the cathode, holes injected from the anode move to the EML, via the HTL, and electrons injected from the cathode move to the EML, via the ETL. The holes and electrons recombine in the EML to generate excitons. When the excitons drop from an excited state to a ground state, light is emitted. The injection and flow of holes and electrons should be balanced, so that an OLED having the above-described structure has excellent efficiency and/or a long lifetime.

Performance of an organic light emitting diode may be affected by characteristics of the semiconductor layer, and among them, may be affected by characteristics of compounds of formula (I) which are also contained in the semiconductor layer.

WO2019168368A1 provides an organic light emitting diode comprising: a cathode; an anode; and a light emitting layer provided between the cathode and the anode, wherein a compound represented by chemical formula 1 and any one of a compound represented by chemical formula 2 and a compound represented by chemical formula 3 are included between the anode and the light emitting layer.

EP1988587A1 discloses as organic doping agent for the doping of an organic semi conductive matrix material, as blocker layer, as charge injection layer or as organic semiconductor itself, an organic mesomeric compound, which is an oxocarbon, pseudooxocarbon or radialene compound.

There remains a need to improve performance of organic semiconductor materials, semiconductor layers, as well as organic electronic devices thereof, in particular to achieve improved operating voltage stability over time through improving the characteristics of the compounds comprised therein.

DISCLOSURE

An aspect of the present invention provides an organic compound for use in organic electronic devices of formula (I): whereby A ¹ is selected from formula (II)

X ¹ is selected from CR ¹ or N; X ² is selected from CR ² or N; X ³ is selected from CR ³ or N; X ⁴ is selected from CR ⁴ or N; X ⁵ is selected from CR ⁵ or N; R ¹ , R ² , R ³ , R ⁴ and R ⁵ (if present) are independently selected from CN, partially fluorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F, D or H. whereby when any of R ¹ , R ² , R ³ , R ⁴ and R ⁵ is present, then the corresponding X ¹ , X ² , X ³ , X ⁴ and X ⁵ is not N; with the proviso that

- at least one R ¹ to R ⁵ is selected from D or H, and

- either R ¹ and/or R ⁵ are independently selected from CN, partially fluorinated or perfluorinated Ci to Cs alkyl, or

- at least one R ⁿ and R ⁿ⁺¹ (with n= 1 to 4) are independently selected from CN, partially fluorinated or perfluorinated Ci to Cs alkyl;

A ² and A ³ are independently selected from formula (III)

Ar^R ^'

(PI) wherein Ar is independently selected from substituted or unsubstituted Ce to Cis aryl and substituted or unsubstituted C ₂ to Cix heteroaryl, wherein the substituents on Ar are independently selected from CN, partially or perfluorinated Ci to Ce alkyl, halogen, Cl, F, D; and

R‘ is selected from Ar, substituted or unsubstituted Ce to Cix aryl or C ₃ to Cix heteroaryl, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, F or CN, wherein the asterix “*” denotes the binding position.

It should be noted that throughout the application and the claims any A ⁿ , B ⁿ , R ⁿ etc. always refer to the same moieties, unless otherwise noted.

In the present specification, when a definition is not otherwise provided, "partially fluorinated" refers to a Ci to Cs alkyl group in which only part of the hydrogen atoms are replaced by fluorine atoms.

In the present specification, when a definition is not otherwise provided, "perfluorinated" refers to a Ci to Cs alkyl group in which all hydrogen atoms are replaced by fluorine atoms.

In the present specification, when a definition is not otherwise provided, "substituted" refers to one substituted with a deuterium, Ci to C ₁₂ alkyl and Ci to C ₁₂ alkoxy. However, in the present specification “aryl substituted” refers to a substitution with one or more aryl groups, which themselves may be substituted with one or more aryl and/or heteroaryl groups.

Correspondingly, in the present specification “heteroaryl substituted” refers to a substitution with one or more heteroaryl groups, which themselves may be substituted with one or more aryl and/or heteroaryl groups.

In the present specification, when a definition is not otherwise provided, an "alkyl group" refers to a saturated aliphatic hydrocarbyl group. The alkyl group may be a Ci to C12 alkyl group. More specifically, the alkyl group may be a Ci to C ₁₀ alkyl group or a Ci to Ce alkyl group. For example, a Ci to C ₄ alkyl group includes 1 to 4 carbons in alkyl chain, and may be selected from methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, and tert-butyl.

Specific examples of the alkyl group may be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group.

The term “cycloalkyl” refers to saturated hydrocarbyl groups derived from a cycloalkane by formal abstraction of one hydrogen atom from a ring atom comprised in the corresponding cycloalkane. Examples of the cycloalkyl group may be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a methylcyclohexyl group, an adamantly group and the like.

The term “hetero” is understood the way that at least one carbon atom, in a structure which may be formed by covalently bound carbon atoms, is replaced by another polyvalent atom. Preferably, the heteroatoms are selected from B, Si, N, P, O, S; more preferably from N, P, O, S.

In the present specification, "aryl group" refers to a hydrocarbyl group which can be created by formal abstraction of one hydrogen atom from an aromatic ring in the corresponding aromatic hydrocarbon. Aromatic hydrocarbon refers to a hydrocarbon which contains at least one aromatic ring or aromatic ring system. Aromatic ring or aromatic ring system refers to a planar ring or ring system of covalently bound carbon atoms, wherein the planar ring or ring system comprises a conjugated system of delocalized electrons fulfilling HiickeTs rule. Examples of aryl groups include monocyclic groups like phenyl or tolyl, polycyclic groups which comprise more aromatic rings linked by single bonds, like biphenyl, and polycyclic groups comprising fused rings, like naphthyl or fluoren-2-yl. Analogously, under heteroaryl, it is especially where suitable understood a group derived by formal abstraction of one ring hydrogen from a heterocyclic aromatic ring in a compound comprising at least one such ring.

Under heterocycloalkyl, it is especially where suitable understood a group derived by formal abstraction of one ring hydrogen from a saturated cycloalkyl ring in a compound comprising at least one such ring.

The term “fused aryl rings” or “condensed aryl rings” is understood the way that two aryl rings are considered fused or condensed when they share at least two common sp ² -hybridized carbon atoms

In the present specification, the single bond refers to a direct bond.

The term “free of’, “does not contain”, “does not comprise” does not exclude impurities which may be present in the compounds prior to deposition. Impurities have no technical effect with respect to the object achieved by the present invention.

The term “contacting sandwiched” refers to an arrangement of three layers whereby the layer in the middle is in direct contact with the two adjacent layers.

The terms “light-absorbing layer” and “light absorption layer” are used synonymously.

The terms “light-emitting layer”, “light emission layer” and “emission layer” are used synonymously.

The terms “OLED”, “organic light-emitting diode” and “organic light-emitting device” are used synonymously.

The terms “anode”, “anode layer” and “anode electrode” are used synonymously.

The terms “cathode”, “cathode layer” and “cathode electrode” are used synonymously.

In the specification, hole characteristics refer to an ability to donate an electron to form a hole when an electric field is applied and that a hole formed in the anode may be easily injected into the emission layer and transported in the emission layer due to conductive characteristics according to a highest occupied molecular orbital (HOMO) level.

In addition, electron characteristics refer to an ability to accept an electron when an electric field is applied and that electrons formed in the cathode may be easily injected into the emission layer and transported in the emission layer due to conductive characteristics according to a lowest unoccupied molecular orbital (LUMO) level. Advantageous Effects

Surprisingly, it was found that the organic compound of the present invention solves the problem underlying the present invention by enabling devices in various aspects superior over the organic electroluminescent devices known in the art, in particular with respect to operating voltage over lifetime.

According to one embodiment of the present invention, the compound is selected of the formula (IV) whereby B ¹ is selected from formula (V)

B ³ and B ⁵ are Ar and B ² , B ⁴ and B ⁶ are R ³ ; wherein the asterix “*” denotes the binding position _.

According to one embodiment of the present invention, either R ¹ and/or R ⁵ are independently selected from CN, perfluorinated Ci to Cs alkyl, or at least one R ⁿ and R ⁿ⁺¹ (with n= 1 to 4) are independently selected from CN, perfluorinated Ci to Cs alkyl.

According to one embodiment of the present invention, either R ¹ and/or R ⁵ are independently selected from CN or CF3, or at least one R ⁿ and R ⁿ⁺¹ (with n= 1 to 4) are independently selected from CN or CF3.

According to one embodiment of the present invention, A ¹ and A ³ are not identical. Alternatively, according to one embodiment of the present invention, at least one from A ² and A ³ is identical to A ¹ _. According to one embodiment of the present invention, A ¹ and A ² are identical and A ¹ and A ³ are not identical.

According to one embodiment of the present invention, A ¹ , A ² and A ³ are identical.

According to one embodiment of the present invention, X ³ is CR ³ and R ³ is selected from partially fluorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F, D or H.

According to one embodiment of the present invention, either X ¹ and/or X ⁵ are C-CN.

According to one embodiment of the present invention, X ¹ and/or X ² are C-CN.

According to one embodiment of the present invention, X ¹ and X ³ are C-CN.

According to one embodiment of the present invention, at least three R ¹ to R ⁵ are independently selected from CN, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F.

According to one embodiment of the present invention, three R ¹ to R ⁵ are independently selected from CN, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F.

According to one embodiment of the present invention, R ¹ and R ³ are independently selected from CN, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F.

According to one embodiment of the present invention, R ¹ and R ³ are independently selected from CN, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F and X ² ,

X ⁴ and X ⁵ are either CH or N.

According to one embodiment of the present invention one of X ¹ to X ⁵ is N and one of R ¹ to R ⁵ is independently selected from CN, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F.

According to one embodiment of the present invention one of X ¹ and X ⁵ is N and one of R ¹ to R ⁵ is independently selected from CN, partially flurorinated or perfluorinated Ci to Cs alkyl, halogen, Cl, F.

According to one embodiment of the present invention two of X ¹ and X ⁵ are N and two of R ¹ to R ⁵ are independently selected from CN, partially fluorinated or perfluorinated Ci to Cs alkyl.

According to one embodiment of the present invention R’ is selected CN.

According to one embodiment of the present invention, formula (II) is selected from the group comprising the following moieties:

According to one embodiment of the present invention, formula (III) is selected from the group comprising the following moieties:

According to one embodiment of the present invention, the compound of formula (I) comprises less than nine CN groups, preferably less than eight CN groups.

According to one embodiment of the present invention, the compound of formula (I) comprises between three and eight CN groups, preferably between three and seven CN groups. When the number of CN groups in the compound of formula (I) is selected in this range, improved processing properties, in particular in vacuum thermal deposition, may be obtained.

According to one embodiment of the present invention, the LUMO level of compound of formula (I) is selected in the range of < -4.7 eV and > -5.4 eV when calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany) by applying the hybrid functional B3LYP with a 6-31 G* basis set in the gas phase, preferably in the range of < -4.75 eV and > -5.36 eV and most preferred in the range of < - 4.8 eV and > -5.3 eV.

According to one embodiment of the present invention, the compound of formula (I) comprises between 3 and 8 CN groups, preferably between 3 and 7 CN groups, and the LUMO level of compound of formula (I) is selected in the range of < -4.7 eV and > -5.4 eV when calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany) by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase, preferably in the range of < -4.75 eV and > -5.36 eV and most preferred in the range of < -4.8 eV and > -5.3 eV.

According to one embodiment of the present invention, the LUMO level of compound of formula (I) is further away from vacuum level than 4,4',4"-((lE,l'E,l"E)-cyclopropane-l,2,3- triylidenetris(cyanomethaneylylidene))tribenzonitrile when determined under the same conditions, preferably further away from vacuum level than 4,4',4"-((lE,l'E,l"E)-cyclopropane-l,2,3- triylidenetris(cyanomethaneylylidene))tris(3-fluorobenzonitr ile); more preferred further away from vacuum level than 4,4',4"-((lE,TE,l"E)-cyclopropane-l,2,3- triylidenetris(cyanomethaneylylidene))tris(3-(trifluoromethy l)benzonitrile).

According to one embodiment of the present invention, the compound of formula (I) comprises between 3 and 8 CN groups, preferably between 3 and 7 CN groups, and the LUMO level of compound of formula (I) is further away from vacuum level than 4,4',4"-((1E,GE,GΈ)- cyclopropane-l,2,3-triylidenetris(cyanomethaneylylidene))tri benzonitrile when determined under the same conditions, preferably further away from vacuum level than 4,4',4"-((1E,GE,GΈ)- cyclopropane-l,2,3-triylidenetris(cyanomethaneylylidene))tri s(3-fluorobenzonitrile); more preferred further away from vacuum level than 4,4',4"-((lE,l'E,l"E)-cyclopropane-l,2,3- triylidenetris(cyanomethaneylylidene))tris(3 -(trifluoromethyl)benzonitrile). According to one embodiment of the present invention, wherein R’ is CN , compound of formula (I) comprises between 3 and 8 CN groups, preferably between 3 and 7 CN groups; and the following formulas are excluded:

According to one embodiment, the compound of formula (I) is selected from the compounds A1 to A31 :

The present invention furthermore relates to an organic electronic device comprising an anode layer, a cathode layer and at least one organic semiconductor layer, wherein the at least one organic semiconductor layer is arranged between the anode layer and the cathode layer; and wherein the at least one organic semiconductor layer comprises a compound of formula (I)

According to one embodiment, the organic semiconductor layer comprises a composition comprising a compound of formula (IV) and at least one compound of formula (IVa) to (IVd)

In case the organic semiconductor layer comprises such a composition, throughout this application text the term “compound of formula (I)” shall also intend to include the composition as described above.

According to one embodiment of the present invention the organic semiconductor layer and/or the compound of formula (I) are non-emissive. In the context of the present specification the term “essentially non-emissive” or “non- emissive” means that the contribution of the compound or layer to the visible emission spectrum from the device is less than 10 %, preferably less than 5 % relative to the visible emission spectrum. The visible emission spectrum is an emission spectrum with a wavelength of about > 380 nm to about < 780 nm.

According to one embodiment of the invention, the at least one organic semiconductor layer further comprises a substantially covalent matrix compound.

Substantially covalent matrix compound

The organic semiconductor layer may further comprises a substantially covalent matrix compound. According to one embodiment the substantially covalent matrix compound may be selected from at least one organic compound. The substantially covalent matrix may consists substantially from covalently bound C, H, O, N, S, which optionally comprise in addition covalently bound B, P, As and/or Se.

According to one embodiment of the organic electronic device, the organic semiconductor layer further comprises a substantially covalent matrix compound, wherein the substantially covalent matrix compound may be selected from organic compounds consisting substantially from covalently bound C, H, O, N, S, which optionally comprise in addition covalently bound B, P, As and/or Se.

Organometallic compounds comprising covalent bonds carbon-metal, metal complexes comprising organic ligands and metal salts of organic acids are further examples of organic compounds that may serve as substantially covalent matrix compounds of the hole injection layer.

In one embodiment, the substantially covalent matrix compound lacks metal atoms and majority of its skeletal atoms may be selected from C, O, S, N. Alternatively, the substantially covalent matrix compound lacks metal atoms and majority of its skeletal atoms may be selected from C and N.

According to one embodiment, the substantially covalent matrix compound may have a molecular weight Mw of > 400 and < 2000 g/mol, preferably a molecular weight Mw of > 450 and < 1500 g/mol, further preferred a molecular weight Mw of > 500 and < 1000 g/mol, in addition preferred a molecular weight Mw of > 550 and < 900 g/mol, also preferred a molecular weight Mw of > 600 and < 800 g/mol. Preferably, the substantially covalent matrix compound comprises at least one arylamine moiety, alternatively a diarylamine moiety, alternatively a triarylamine moiety.

Preferably, the substantially covalent matrix compound is free of metals and/or ionic bonds.

Compound of formula or a compound of formula (VIII

According to another aspect of the present invention, the at least one matrix compound, also referred to as “substantially covalent matrix compound”, may comprises at least one arylamine compound, diarylamine compound, triarylamine compound, a compound of formula (VI) or a compound of formula (VII): wherein:

T ¹ , T ² , T ³ , T ⁴ and T ⁵ are independently selected from a single bond, phenylene, biphenylene, terphenylene or naphthenylene, preferably a single bond or phenylene;

T ⁶ is phenylene, biphenylene, terphenylene or naphthenylene;

Ar ¹ , Ar ² , Ar ³ , Ar ⁴ and Ar ⁵ are independently selected from substituted or unsubstituted Ce to C20 aryl, or substituted or unsubstituted C3 to C20 heteroarylene, substituted or unsubstituted biphenylene, substituted or unsubstituted fluorene, substituted 9-fluorene, substituted 9,9- fluorene, substituted or unsubstituted naphthalene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted pyrene, substituted or unsubstituted perylene, substituted or unsubstituted triphenylene, substituted or unsubstituted tetracene, substituted or unsubstituted tetraphene, substituted or unsubstituted dibenzofurane, substituted or unsubstituted dibenzothiophene, substituted or unsubstituted xanthene, substituted or unsubstituted carbazole, substituted 9-phenylcarbazole, substituted or unsubstituted azepine, substituted or unsubstituted dibenzo[b,f]azepine, substituted or unsubstituted 9,9'- spirobi[fluorene], substituted or unsubstituted spiro[fluorene-9,9'-xanthene], or a substituted or unsubstituted aromatic fused ring system comprising at least three substituted or unsubstituted aromatic rings selected from the group comprising substituted or unsubstituted non-hetero, substituted or unsubstituted hetero 5 -member rings, substituted or unsubstituted 6-member rings and/or substituted or unsubstituted 7-member rings, substituted or unsubstituted fluorene, or a fused ring system comprising 2 to 6 substituted or unsubstituted 5- to 7-member rings and the rings are selected from the group comprising (i) unsaturated 5- to 7-member ring of a heterocycle, (ii) 5- to 6-member of an aromatic heterocycle, (iii) unsaturated 5- to 7-member ring of a non-heterocycle, (iv) 6-member ring of an aromatic non-heterocycle; wherein the substituents of Ar ¹ , Ar ² , Ar ³ , Ar ⁴ and Ar ⁵ are selected the same or different from the group comprising H, D, F, C(-0)R ² , CN, Si(R ² ) ₃ , P(-0)(R ² ) ₂ , OR ² , S(-0)R ² , S(-0) ₂ R ² , substituted or unsubstituted straight-chain alkyl having 1 to 20 carbon atoms, substituted or unsubstituted branched alkyl having 1 to 20 carbon atoms, substituted or unsubstituted cyclic alkyl having 3 to 20 carbon atoms, substituted or unsubstituted alkenyl or alkynyl groups having 2 to 20 carbon atoms, substituted or unsubstituted alkoxy groups having 1 to 20 carbon atoms, substituted or unsubstituted aromatic ring systems having 6 to 40 aromatic ring atoms, and substituted or unsubstituted heteroaromatic ring systems having 5 to 40 aromatic ring atoms, unsubstituted Cr _> to Ci ₈ aryl, unsubstituted C3 to Cis heteroaryl, a fused ring system comprising 2 to 6 unsubstituted 5- to 7-member rings and the rings are selected from the group comprising unsaturated 5- to 7-member ring of a heterocycle, 5- to 6-member of an aromatic heterocycle, unsaturated 5- to 7-member ring of a non-heterocycle, and 6-member ring of an aromatic non heterocycle, wherein R ² may be selected from H, D, straight-chain alkyl having 1 to 6 carbon atoms, branched alkyl having 1 to 6 carbon atoms, cyclic alkyl having 3 to 6 carbon atoms, alkenyl or alkynyl groups having 2 to 6 carbon atoms, Ce to C is aryl or C ₃ to Cis heteroaryl.

According to an embodiment wherein T ¹ , T ² , T ³ , T ⁴ and T ⁵ may be independently selected from a single bond, phenylene, biphenylene or terphenylene. According to an embodiment wherein T ¹ , T ² , T ³ , T ⁴ and T ⁵ may be independently selected from phenylene, biphenylene or terphenylene and one of T ¹ , T ² , T ³ , T ⁴ and T ⁵ are a single bond. According to an embodiment wherein T ¹ , T ² , T ³ , T ⁴ and T ⁵ may be independently selected from phenylene or biphenylene and one of T ¹ , T ² , T ³ , T ⁴ and T ⁵ are a single bond. According to an embodiment wherein T ¹ , T ² , T ³ , T ⁴ and T ⁵ may be independently selected from phenylene or biphenylene and two of T ¹ , T ² , T ³ , T ⁴ and T ⁵ are a single bond.

According to an embodiment wherein T ¹ , T ² and T ³ may be independently selected from phenylene and one of T ¹ , T ² and T ³ are a single bond. According to an embodiment wherein T ¹ , T ² and T ³ may be independently selected from phenylene and two of T ¹ , T ² and T ³ are a single bond.

According to an embodiment wherein T ⁶ may be phenylene, biphenylene, terphenylene. According to an embodiment wherein T ⁶ may be phenylene. According to an embodiment wherein T ⁶ may be biphenylene. According to an embodiment wherein T ⁶ may be terphenylene.

According to an embodiment wherein Ar ¹ , Ar ² , Ar ³ , Ar ⁴ and Ar ⁵ may be independently selected from D1 to D16: wherein the asterix “*” denotes the binding position.

According to an embodiment, wherein Ar ¹ , Ar ² , Ar ³ , Ar ⁴ and Ar ⁵ may be independently selected from D1 to D15; alternatively selected from D1 to DIO and D13 to D15.

According to an embodiment, wherein Ar ¹ , Ar ² , Ar ³ , Ar ⁴ and Ar ⁵ may be independently selected from the group consisting of Dl, D2, D5, D7, D9, DIO, D13 to D16.

The rate onset temperature may be in a range particularly suited to mass production, when Ar ¹ , Ar ² , Ar ³ , Ar ⁴ and Ar ⁵ are selected in this range.

The “matrix compound of formula (VI) or formula (VII)“ may be also referred to as “hole transport compound”.

According to one embodiment, the substantially covalent matrix compound comprises at least one naphthyl group, carbazole group, dibenzofurane group, dibenzothiophene group and/or substituted fluorenyl group, wherein the substituents are independently selected from methyl, phenyl or fluorenyl.

According to an embodiment of the electronic device, wherein the matrix compound of formula (VI) or formula (VII) are selected from FI to FI 9:

Organic semiconductor layer

The organic semiconductor layer may be formed on the anode layer or cathode layer by vacuum deposition, spin coating, printing, casting, slot-die coating, Langmuir-Blodgett (LB) deposition, or the like. When the Organic semiconductor layer is formed using vacuum deposition, the deposition conditions may vary according to the compound(s) that are used to form the layer, and the desired structure and thermal properties of the layer. In general, however, conditions for vacuum deposition may include a deposition temperature of 100° C to 350° C, a pressure of 10 ⁸ to 10 ³ Torr (1 Torr equals 133.322 Pa), and a deposition rate of 0.1 to 10 nm/sec.

When the organic semiconductor layer is formed using spin coating or printing, coating conditions may vary according to the compound(s) that are used to form the layer, and the desired structure and thermal properties of the organic semiconductor layer. For example, the coating conditions may include a coating speed of about 2000 rpm to about 5000 rpm, and a thermal treatment temperature of about 80° C to about 200° C. Thermal treatment removes a solvent after the coating is performed.

The thickness of the organic semiconductor layer may be in the range from about 1 nm to about 20 nm, and for example, from about 2 nm to about 15 nm, alternatively about 2 nm to about 12 nm.

When the thickness of the organic semiconductor layer is within this range, the organic semiconductor layer may have excellent hole injecting and/or hole generation characteristics, without a substantial penalty in driving voltage.

According to one embodiment of the present invention, the organic semiconductor layer may comprise:

- at least about > 0.5 wt.-% to about < 30 wt.-%, preferably about > 0.5 wt.-% to about < 20 wt- %, and more preferred about > 1 wt.-% to about < 15 wt.-% of a compound of formula (I), and

- at least about > 70 wt.-% to about < 99.5 wt.-%, preferably about > 80 wt.-% to about < 99.5 wt.-%, and more preferred about > 85 wt.-% to about < 99 wt.-% of a substantially covalent matrix compound; preferably the wt.-% of the compound of formula (I) is lower than the wt- % of the substantially covalent matrix compound; wherein the weight-% of the components are based on the total weight of the organic semiconductor layer.

According to one embodiment of the invention, the organic electronic device comprises at least one photoactive layer and the at least one of the at least one organic semiconductor layers is arranged between the anode and the at least one photoactive layer.

According to one embodiment of the invention, the organic electronic device comprises at least two photoactive layers, wherein at least one of the at least one organic semiconductor layers is arranged between the first and the second photoactive layer. According to one embodiment of the invention, the organic electronic devices comprises at least one photoactive layer, wherein the photoactive layer is arranged between the anode layer and the cathode layer.

According to one embodiment of the invention, the organic electronic devices comprises at least one photoactive layer and the at least one organic semiconductor layers is arranged between the anode and the at least one photoactive layer.

According to one embodiment of the invention, the organic electronic device comprises at least two photoactive layers, wherein at least one of the at least one organic semiconductor layers is arranged between the first and the second photoactive layer.

According to one embodiment of the invention, the organic electronic device comprises at least two photoactive layers, wherein one of the at least one organic semiconductor layers is arranged between the first and the second photoactive layer and one of the at least one organic semiconductor layers is arranged between the anode layer and the first photoactive layer.

According to one embodiment of the invention the electronic organic device is an electroluminescent device, preferably an organic light emitting diode.

According to one embodiment of the invention, the electronic organic device is not an organic light emitting diode comprising a substrate, an anode, a cathode, a first emission layer, an electron injection layer and a second electron transport layer stack, wherein the second electron transport layer stack is arranged between the first emission layer and the electron injection layer; wherein at least one of the first electron transport layer stack and the second electron transport layer stack comprises independently a first electron transport layer and a second electron transport layer;

- the first electron transport layer comprises a compound of Formula (X)

(Ar^Acja-Xb (X); a and b are independently 1 or 2; c is independently 0 or 1 ;

Ar ¹ is independently selected from Ce to Ceo aryl or C ₂ to C ₄₂ heteroaryl, wherein each Ar ¹ may be substituted with one or two substituents independently selected from the group consisting of Ce to C ₁₂ aryl, C ₃ to Cn heteroaryl, and Ci to Ob alkyl, D,

Ci to C ₆ alkoxy, C ₃ to Ce branched alkyl, C ₃ to Ce cyclic alkyl, C ₃ to Ce branched alkoxy, C ₃ to Ce cyclic alkoxy, partially or perfluorinated Ci to Ce alkyl, partially or perfluorinated Ci to Ce alkoxy, partially or perdeuterated Ci to Ce alkyl, partially or perdeuterated Ci to Ce alkoxy, halogen, CN or PY(R ¹⁰ )2, wherein Y is selected from O, S or Se, preferably O and R ¹⁰ is independently selected from Ce to C12 aryl, C3 to C12 heteroaryl, Ci to C ₆ alkyl, Ci to C ₆ alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C6 alkyl, partially or perdeuterated Ci to C6 alkoxy; wherein each C ₆ to C12 aryl substituent on Ar ¹ and each C3 to Cn heteroaryl substituent on Ar ¹ may be substituted with Ci to C4 alkyl or halogen;

A is independently selected from C ₆ to C30 aryl, wherein each A may be substituted with one or two substituents independently selected from the group consisting of C6 to C ₁₂ aryl and Ci to C6 alkyl, D, Ci to C6 alkoxy, C ₃ to C ₆ branched alkyl, C ₃ to C ₆ cyclic alkyl, C ₃ to C ₆ branched alkoxy, C ₃ to C ₆ cyclic alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to C ₆ alkoxy, halogen, CN or PY(R ¹⁰ ) ₂ , wherein Y is selected from O, S or Se, preferably O, and R ¹⁰ is independently selected from C ₆ to C ₁₂ aryl, C ₃ to C ₁₂ heteroaryl, Ci to C6 alkyl, Ci to C6 alkoxy, partially or perfluorinated Ci to C6 alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to C6 alkoxy; wherein each C6 to C ₁₂ aryl substituent on A may be substituted with Ci to C ₄ alkyl or halogen;

- X is independently selected from the group consisting of C ₂ to C ₄₂ heteroaryl and C ₆ to C60 aryl, wherein each X may be substituted with one or two substituents independently selected from the group consisting of C ₆ to C ₁₂ aryl, C ₃ to Cn heteroaryl, and Ci to C6 alkyl, D,

Ci to C ₆ alkoxy, C ₃ to C ₆ branched alkyl, C ₃ to C ₆ cyclic alkyl, C ₃ to C ₆ branched alkoxy, C ₃ to C ₆ cyclic alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to C ₆ alkoxy, halogen, CN or PY(R ¹⁰ ) ₂ , wherein Y is selected from O, S or Se, preferably O, and R ¹⁰ is independently selected from C ₆ to C ₁₂ aryl, C ₃ to C ₁₂ heteroaryl, Ci to C ₆ alkyl, Ci to C ₆ alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to C ₆ alkoxy; wherein each Ce to C ₁₂ aryl substituent on X and each C ₃ to Cn heteroaryl substituent on X may be substituted with Ci to C ₄ alkyl or halogen;

- the molecular dipole moment of the compound of formula (X) is > 0 D and < 4 D;

- the second electron transport layer comprises a compound of Formula (XI) (Ar ² ) _m -(Zk-G)n (XI); m and n are independently 1 or 2; k is independently 0, 1 or 2;

Ar ² is independently selected from the group consisting of C ₂ to C ₄₂ heteroaryl and Ce to C60 aryl, wherein each Ar ² may be substituted with one or two substituents independently selected from the group consisting of C6 to C12 aryl, C3 to C11 heteroaryl, and Ci to C6 alkyl, D,

Ci to C ₆ alkoxy, C ₃ to Ce branched alkyl, C ₃ to Ce cyclic alkyl, C ₃ to Ce branched alkoxy, C ₃ to C ₆ cyclic alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to C ₆ alkoxy, halogen, CN or PY(R ¹⁰ ) ₂ , wherein Y is selected from O, S or Se, preferably O, and R ¹⁰ is independently selected from C6 to C12 aryl, C3 to C12 heteroaryl, Ci to C6 alkyl, Ci to C6 alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to Ce alkyl, partially or perdeuterated Ci to Ce alkoxy; wherein each Ce to C ₁₂ aryl substituent on Ar ² and each C ₃ to Cn heteroaryl substituent on Ar ² may be substituted with Ci to C ₄ alkyl or halogen;

- Z is independently selected from Ce to C ₃₀ aryl, wherein each Z may be substituted with one or two substituents independently selected from the group consisting of Ce to C ₁₂ aryl and Ci to C6 alkyl, D, Ci to Ce alkoxy, C ₃ to C ₆ branched alkyl, C ₃ to Ce cyclic alkyl, C ₃ to Ce branched alkoxy, C ₃ to Ce cyclic alkoxy, partially or perfluorinated Ci to C ₆ alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to C ₆ alkoxy, halogen, CN or PY(R ¹⁰ ) ₂ , wherein Y is selected from O, S or Se, preferably O, and R ¹⁰ is independently selected from Ce to C ₁₂ aryl, C ₃ to C ₁₂ heteroaryl, Ci to C6 alkyl, Ci to C6 alkoxy, partially or perfluorinated Ci to C6 alkyl, partially or perfluorinated Ci to C ₆ alkoxy, partially or perdeuterated Ci to C ₆ alkyl, partially or perdeuterated Ci to Ce alkoxy; wherein each Cr _> to C ₁₂ aryl substituent on Z may be substituted with Ci to C ₄ alkyl or halogen;

G is chosen so that the dipole moment of a compound G-phenyl is > 1 D and < 7 D; and

- the first electron transport layer and the second electron transport layer are free of an electrical dopant; characterized in that

- the organic light emitting diode further comprises a p-type layer;

- the p-type layer is arranged between the anode and the first emission layer; and the p-type layer comprises a radialene compound.

The present invention furthermore relates to an organic electronic device comprising an anode layer, a cathode layer, at least one photoactive layer and at least one organic semiconductor layer, wherein the at least one organic semiconductor layer is arranged between the at least one photoactive layer and the cathode; and wherein the at least one organic semiconductor layer comprises a compound of the present invention.

The present invention furthermore relates to a display device comprising an organic electronic device according to the present invention.

Further layers

In accordance with the invention, the organic electronic device may comprise, besides the layers already mentioned above, further layers. Exemplary embodiments of respective layers are described in the following:

Substrate

The substrate may be any substrate that is commonly used in manufacturing of, electronic devices, such as organic light-emitting diodes. If light is to be emitted through the substrate, the substrate shall be a transparent or semitransparent material, for example a glass substrate or a transparent plastic substrate. If light is to be emitted through the top surface, the substrate may be both a transparent as well as a non-transparent material, for example a glass substrate, a plastic substrate, a metal substrate or a silicon substrate.

Anode layer

The anode layer may be formed by depositing or sputtering a material that is used to form the anode layer. The material used to form the anode layer may be a high work-function material, so as to facilitate hole injection. The anode material may also be selected from a low work function material (i.e. aluminum). The anode electrode may be a transparent or reflective electrode. Transparent conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), tin-dioxide (Sn02), aluminum zinc oxide (A1ZO) and zinc oxide (ZnO), may be used to form the anode electrode. The anode layer may also be formed using metals, typically silver (Ag), gold (Au), or metal alloys.

Hole injection layer

A hole injection layer (HIL) may be formed on the anode layer by vacuum deposition, spin coating, printing, casting, slot-die coating, Langmuir-Blodgett (LB) deposition, or the like. When the HIL is formed using vacuum deposition, the deposition conditions may vary according to the compound that is used to form the HIL, and the desired structure and thermal properties of the HIL. In general, however, conditions for vacuum deposition may include a deposition temperature of 100° C to 500° C, a pressure of 10 ⁸ to 10 ³ Torr (1 Torr equals 133.322 Pa), and a deposition rate of 0.1 to 10 nm/sec.

When the HIL is formed using spin coating or printing, coating conditions may vary according to the compound that is used to form the HIL, and the desired structure and thermal properties of the HIL. For example, the coating conditions may include a coating speed of about 2000 rpm to about 5000 rpm, and a thermal treatment temperature of about 80° C to about 200° C. Thermal treatment removes a solvent after the coating is performed.

The HIL may be formed of any compound that is commonly used to form a HIL. Examples of compounds that may be used to form the HIL include a phthalocyanine compound, such as copper phthalocyanine (CuPc), 4,4',4"-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA), TDATA, 2T-NATA, polyaniline/dodecylbenzenesulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (Pani/CSA), and polyaniline)/poly(4-styrenesulfonate (PANI/PSS).

The HIL may comprise or consist of p-type dopant and the p-type dopant may be selected from tetrafluoro-tetracyanoquinonedimethane (F4TCNQ), 2,2'-(perfluoronaphthalen-2,6- diylidene) dimalononitrile or 2,2',2"-(cyclopropane-l,2,3-triylidene)tris(2-(p- cyanotetrafluorophenyl)acetonitrile) but not limited hereto. The HIL may be selected from a hole transporting matrix compound doped with a p-type dopant. Typical examples of known doped hole transport materials are: copper phthalocyanine (CuPc), which HOMO level is approximately -5.2 eV, doped with tetrafluoro-tetracyanoquinonedimethane (F4TCNQ), which LUMO level is about -5.2 eV; zinc phthalocyanine (ZnPc) (HOMO = -5.2 eV) doped with F4TCNQ; a-NPD (N,N'-Bis(naphthalen-l-yl)-N,N'-bis(phenyl)-benzidine) doped with F4TCNQ. a-NPD doped with 2,2'-(perfluoronaphthalen-2,6-diylidene) dimalononitrile. The p-type dopant concentrations can be selected from 1 to 20 wt.-%, more preferably from 3 wt.-% to 10 wt.-%.

The thickness of the HU. may be in the range from about 1 nm to about 100 nm, and for example, from about 1 nm to about 25 nm. When the thickness of the HIL is within this range, the HIL may have excellent hole injecting characteristics, without a substantial penalty in driving voltage.

Hole transport layer

A hole transport layer (HTL) may be formed on the HIL by vacuum deposition, spin coating, slot-die coating, printing, casting, Langmuir-Blodgett (LB) deposition, or the like. When the HTL is formed by vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for the vacuum or solution deposition may vary, according to the compound that is used to form the HTL.

The HTL may be formed of any compound that is commonly used to form a HTL. Compounds that can be suitably used are disclosed for example in Yasuhiko Shirota and Hiroshi Kageyama, Chem. Rev. 2007, 107, 953-1010 and incorporated by reference. Examples of the compound that may be used to form the HTL are: carbazole derivatives, such as N- phenylcarbazole or polyvinylcarbazole; benzidine derivatives, such as N,N'-bis(3-methylphenyl)- N,N'-diphenyl-[l,l-biphenyl]-4,4'-diamine (TPD), or N,N'-di(naphthalen-l-yl)-N,N'-diphenyl benzidine (alpha-NPD); and triphenylamine-based compound, such as 4,4',4"-tris(N- carbazolyl)triphenylamine (TCTA). Among these compounds, TCTA can transport holes and inhibit excitons from being diffused into the EML.

According to one embodiment of the present invention, the hole transport layer may comprise the same substantially covalent matrix compound as the organic semiconductor layer.

The thickness of the HTL may be in the range of about 5 nm to about 250 nm, preferably, about 10 nm to about 200 nm, further about 20 nm to about 190 nm, further about 40 nm to about 180 nm, further about 60 nm to about 170 nm, further about 80 nm to about 160 nm, further about 100 nm to about 160 nm, further about 120 nm to about 140 nm. A preferred thickness of the HTL may be 170 nm to 200 nm.

When the thickness of the HTL is within this range, the HTL may have excellent hole transporting characteristics, without a substantial penalty in driving voltage.

Electron blocking layer

The function of an electron blocking layer (EBL) is to prevent electrons from being transferred from an emission layer to the hole transport layer and thereby confine electrons to the emission layer. Thereby, efficiency, operating voltage and/or lifetime are improved. Typically, the electron blocking layer comprises a triarylamine compound. The triarylamine compound may have a LUMO level closer to vacuum level than the LUMO level of the hole transport layer. The electron blocking layer may have a HOMO level that is further away from vacuum level compared to the HOMO level of the hole transport layer. The thickness of the electron blocking layer may be selected between 2 and 20 nm.

If the electron blocking layer has a high triplet level, it may also be described as triplet control layer.

The function of the triplet control layer is to reduce quenching of triplets if a phosphorescent green or blue emission layer is used. Thereby, higher efficiency of light emission from a phosphorescent emission layer can be achieved. The triplet control layer is selected from triarylamine compounds with a triplet level above the triplet level of the phosphorescent emitter in the adjacent emission layer. Suitable compounds for the triplet control layer, in particular the triarylamine compounds, are described in EP 2722 908 Al. Photoactive layer (PAL)

The photoactive layer converts an electrical current into photons or photons into an electrical current.

The PAL may be formed on the HTL by vacuum deposition, spin coating, slot-die coat ing, printing, casting, LB deposition, or the like. When the PAL is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the PAL.

According to one embodiment of the present invention, the photoactive layer does not comprise the compound of formula (I).

The photoactive layer may be a light-emitting layer or a light-absorbing layer.

Emission layer (EML)

The EML may be formed on the HTL by vacuum deposition, spin coating, slot-die coat ing, printing, casting, LB deposition, or the like. When the EML is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the EML.

According to one embodiment of the present invention, the emission layer does not comprise the compound of formula (I).

The emission layer (EML) may be formed of a combination of a host and an emitter dopant. Example of the host are Alq3, 4,4'-N,N'-dicarbazole-biphenyl (CBP), poly(n- vinylcarbazole) (PVK), 9, 10-di(naphthalene-2-yl)anthracene (ADN), 4,4',4"-tris(carbazol-9-yl)- triphenylamine(TCTA), l,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBI), 3-tert-butyl- 9,10-di-2-naphthylanthracenee (TB DN), distyrylarylene (DSA) and bis(2-(2- hydroxyphenyl)benzo-thiazolate)zinc (Zn(BTZ)2).

The emitter dopant may be a phosphorescent or fluorescent emitter. Phosphorescent emitters and emitters which emit light via a thermally activated delayed fluorescence (TADF) mechanism may be preferred due to their higher efficiency. The emitter may be a small molecule or a polymer. Examples of red emitter dopants are PtOEP, Ir(piq)3, and Btp21r(acac), but are not limited thereto. These compounds are phosphorescent emitters, however, fluorescent red emitter dopants could also be used.

Examples of phosphorescent green emitter dopants are Ir(ppy)3 (ppy = phenylpyridine), Ir(ppy)2(acac), Ir(mpyp)3.

Examples of phosphorescent blue emitter dopants are F2Irpic, (F2ppy)2Ir(tmd) and Ir(dfppz)3 and ter-fluorene. 4.4'-bis(4-diphenyl amiostyryl)biphenyl (DPAVBi), 2,5,8,11-tetra- tert-butyl perylene (TBPe) are examples of fluorescent blue emitter dopants.

The amount of the emitter dopant may be in the range from about 0.01 to about 50 parts by weight, based on 100 parts by weight of the host. Alternatively, the emission layer may consist of a light-emitting polymer. The EML may have a thickness of about 10 nm to about 100 nm, for example, from about 20 nm to about 60 nm. When the thickness of the EML is within this range, the EML may have excellent light emission, without a substantial penalty in driving voltage.

Hole blocking layer (HBL)

A hole blocking layer (HBL) may be formed on the EML, by using vacuum deposition, spin coating, slot-die coating, printing, casting, LB deposition, or the like, in order to prevent the diffusion of holes into the ETL. When the EML comprises a phosphorescent dopant, the HBL may have also a triplet exciton blocking function.

The HBL may also be named auxiliary ETL or a-ETL.

When the HBL is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the HBL. Any compound that is commonly used to form a HBL may be used. Examples of compounds for forming the HBL include oxadiazole derivatives, triazole derivatives, phenanthroline derivatives and azine derivatives, preferably triazine or pyrimidine derivatives.

The HBL may have a thickness in the range from about 5 nm to about 100 nm, for example, from about 10 nm to about 30 nm. When the thickness of the HBL is within this range, the HBL may have excellent hole-blocking properties, without a substantial penalty in driving voltage. Electron transport layer (ETL)

The organic electronic device according to the present invention may further comprise an electron transport layer (ETL).

According to another embodiment of the present invention, the electron transport layer may further comprise an azine compound, preferably a triazine compound.

In one embodiment, the electron transport layer may further comprise a dopant selected from an alkali organic complex, preferably LiQ.

The thickness of the ETL may be in the range from about 15 nm to about 50 nm, for example, in the range from about 20 nm to about 40 nm. When the thickness of the EIL is within this range, the ETL may have satisfactory electron-injecting properties, without a substantial penalty in driving voltage.

According to another embodiment of the present invention, the organic electronic device may further comprise a hole blocking layer and an electron transport layer, wherein the hole blocking layer and the electron transport layer comprise an azine compound. Preferably, the azine compound is a triazine compound.

Electron injection layer (EIL)

An optional EIL, which may facilitates injection of electrons from the cathode, may be formed on the ETL, preferably directly on the electron transport layer. Examples of materials for forming the EIL include lithium 8-hydroxyquinolinolate (LiQ), LiF, NaCl, CsF, Li20, BaO, Ca, Ba, Yb, Mg which are known in the art. Deposition and coating conditions for forming the EIL are similar to those for formation of the HIL, although the deposition and coating conditions may vary, according to the material that is used to form the EIL.

The thickness of the EIL may be in the range from about 0.1 nm to about 10 nm, for example, in the range from about 0.5 nm to about 9 nm. When the thickness of the EIL is within this range, the EIL may have satisfactory electron- injecting properties, without a substantial penalty in driving voltage.

Cathode layer

The cathode layer is formed on the ETL or optional EIL. The cathode layer may be formed of a metal, an alloy, an electrically conductive compound, or a mixture thereof. The cathode electrode may have a low work function. For example, the cathode layer may be formed of lithium (Li), magnesium (Mg), aluminum (Al), aluminum (Al)-lithium (Li), calcium (Ca), barium (Ba), ytterbium (Yb), magnesium (Mg)-indium (In), magnesium (Mg)-silver (Ag), or the like. Alternatively, the cathode electrode may be formed of a transparent conductive oxide, such as ITO or IZO.

The thickness of the cathode layer may be in the range from about 5 nm to about 1000 nm, for example, in the range from about 10 nm to about 100 nm. When the thickness of the cathode layer is in the range from about 5 nm to about 50 nm, the cathode layer may be transparent or semitransparent even if formed from a metal or metal alloy.

It is to be understood that the cathode layer is not part of an electron injection layer or the electron transport layer.

Organic light-emitting diode (OLED)

The organic electronic device according to the invention may be an organic light-emitting device.

According to one aspect of the present invention, there is provided an organic light- emitting diode (OLED) comprising: a substrate; an anode electrode formed on the substrate; an organic semiconductor layer comprising a compound of formula (I) , a hole transport layer, an emission layer, an electron transport layer and a cathode electrode.

According to another aspect of the present invention, there is provided an OLED comprising: a substrate; an anode electrode formed on the substrate; an organic semiconductor layer comprising a compound of formula (I), a hole transport layer, an electron blocking layer, an emission layer, a hole blocking layer, an electron transport layer and a cathode electrode.

According to another aspect of the present invention, there is provided an OLED comprising: a substrate; an anode electrode formed on the substrate; an organic semiconductor layer comprising a compound of formula (I), a hole transport layer, an electron blocking layer, an emission layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a cathode electrode.

According to various embodiments of the present invention, there may be provided OLEDs layers arranged between the above mentioned layers, on the substrate or on the top electrode. According to one aspect, the OLED may comprise a layer structure of a substrate that is adjacent arranged to an anode electrode, the anode electrode is adjacent arranged to a first hole injection layer, the first hole injection layer is adjacent arranged to a first hole transport layer, the first hole transport layer is adjacent arranged to a first electron blocking layer, the first electron blocking layer is adjacent arranged to a first emission layer, the first emission layer is adjacent arranged to a first electron transport layer, the first electron transport layer is adjacent arranged to an n-type charge generation layer, the n-type charge generation layer is adjacent arranged to a hole generating layer, the hole generating layer is adjacent arranged to a second hole transport layer, the second hole transport layer is adjacent arranged to a second electron blocking layer, the second electron blocking layer is adjacent arranged to a second emission layer, between the second emission layer and the cathode electrode an optional electron transport layer and/or an optional injection layer are arranged.

The organic semiconductor layer according to the invention may be the first hole injection layer and/or the p-type charge generation layer.

For example, the OLED according to Fig. 2 may be formed by a process, wherein on a substrate (110), an anode layer (120), a hole injection layer (130), a hole transport layer (140), an electron blocking layer (145), an emission layer (150), a hole blocking layer (155), an electron transport layer (160), an electron injection layer (180) and the cathode layer (190) are subsequently formed in that order.

Organic electronic device

The organic electronic device according to the invention may be a light emitting device, or a photovoltaic cell, and preferably a light emitting device.

According to another aspect of the present invention, there is provided a method of manufacturing an organic electronic device, the method using: at least one deposition source, preferably two deposition sources and more preferred at least three deposition sources.

The methods for deposition that can be suitable comprise: deposition via vacuum thermal evaporation; deposition via solution processing, preferably the processing is selected from spin coating, printing, casting; and/or slot-die coating.

According to various embodiments of the present invention, there is provided a method using: a first deposition source to release the compound of formula (I) according to the invention, and a second deposition source to release the substantially covalent matrix compound; the method comprising the steps of forming the organic semiconductor layer; whereby for an organic light-emitting diode (OLED): the organic semiconductor layer is formed by releasing the compound of formula (I) according to the invention from the first deposition source and the substantially covalent matrix compound from the second deposition source.

According to various embodiments of the present invention, the method may further include forming on the anode electrode, at least one layer selected from the group consisting of forming a hole transport layer or forming a hole blocking layer, and an emission layer between the anode electrode and the first electron transport layer.

According to various embodiments of the present invention, the method may further include the steps for forming an organic light-emitting diode (OLED), wherein on a substrate an anode electrode is formed, on the anode electrode an organic semiconductor layer comprising a compound of formula (I) is formed, on the organic semiconductor layer comprising a compound of formula (I) a hole transport layer is formed, on the hole transport layer an emission layer is formed, on the emission layer an electron transport layer is formed, optionally a hole blocking layer is formed on the emission layer, and finally a cathode electrode is formed, optional a hole blocking layer is formed in that order between the first anode electrode and the emission layer, optional an electron injection layer is formed between the electron transport layer and the cathode electrode. According to various embodiments, the OLED may have the following layer structure, wherein the layers having the following order: anode, organic semiconductor layer comprising a compound of formula (I) according to the invention, first hole transport layer, second hole transport layer, emission layer, optional hole blocking layer, electron transport layer, optional electron injection layer, and cathode.

According to another aspect of the invention, it is provided an electronic device comprising at least one organic light emitting device according to any embodiment described throughout this application, preferably, the electronic device comprises the organic light emitting diode in one of embodiments described throughout this application. More preferably, the electronic device is a display device.

Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples. Reference will now be made in detail to the exemplary aspects.

Description of the Drawings

The aforementioned components, as well as the claimed components and the components to be used in accordance with the invention in the described embodiments, are not subject to any special exceptions with respect to their size, shape, material selection and technical concept such that the selection criteria known in the pertinent field can be applied without limitations.

Additional details, characteristics and advantages of the object of the invention are disclosed in the dependent claims and the following description of the respective figures which in an exemplary fashion show preferred embodiments according to the invention. Any embodiment does not necessarily represent the full scope of the invention, however, and reference is made therefore to the claims and herein for interpreting the scope of the invention. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation of the present invention as claimed.

FIG. 1 is a schematic sectional view of an organic electronic device, according to an exemplary embodiment of the present invention; FIG. 2 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention;

FIG. 3 is a schematic sectional view of an OLED, according to an exemplary embodiment of the present invention.

FIG. 4 is a schematic sectional view of a tandem OLED comprising a charge generation layer, according to an exemplary embodiment of the present invention.

FIG. 5 is a schematic sectional view of a tandem OLED comprising a charge generation layer, according to an exemplary embodiment of the present invention.

Hereinafter, the figures are illustrated in more detail with reference to examples.

However, the present disclosure is not limited to the following figures.

Herein, when a first element is referred to as being formed or disposed "on" or “onto” a second element, the first element can be disposed directly on the second element, or one or more other elements may be disposed there between. When a first element is referred to as being formed or disposed "directly on" or “directly onto” a second element, no other elements are disposed there between.

FIG. 1 is a schematic sectional view of an organic electronic device 100, according to an exemplary embodiment of the present invention. The organic electronic device 100 includes a substrate 110, an anode layer 120 and a hole injection layer (HIL) (130) which may comprise compound of Formula (I). The HIL 130 is disposed on the anode layer 120. Onto the HIL 130, a photoactive layer (PAL) 170 and a cathode layer 190 are disposed.

FIG. 2 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention. The OLED 100 includes a substrate 110, an anode layer 120 and a hole injection layer (HIL) 130 which may comprise compound of Formula (I). The HIL 130 is disposed on the anode layer 120. Onto the HIL 130, a hole transport layer (HTL) 140, an emission layer (EML) 150, an electron transport layer (ETL) 160, an electron injection layer (EIL) 180 and a cathode layer 190 are disposed. Instead of a single electron transport layer 160, optionally an electron transport layer stack (ETL) can be used.

Fig. 3 is a schematic sectional view of an OLED 100, according to another exemplary embodiment of the present invention. Fig. 3 differs from Fig. 2 in that the OLED 100 of Fig. 3 comprises an electron blocking layer (EBL) 145 and a hole blocking layer (HBL) 155. Referring to Fig. 3, the OLED 100 includes a substrate 110, an anode layer 120, a hole injection layer (HIL) 130 which may comprise compound of Formula (I), a hole transport layer (HTL) 140, an electron blocking layer (EBL) 145, an emission layer (EML) 150, a hole blocking layer (HBL) 155, an electron transport layer (ETL) 160, an electron injection layer (EIL) 180 and a cathode layer 190.

Fig. 4 is a schematic sectional view of an OLED 100, according to another exemplary embodiment of the present invention. Fig. 4 differs from Fig. 2 and 3 in that the OLED 200 of Fig. 4 comprises a charge generation layer (CGL) and an additional electron transport layer (ETL) 161 which replace the hole injection layer (HIL) 130 of OLED 100 in Fig. 3.

Referring to Fig. 4 the OLED 200 includes a substrate 110, an anode 120, a first electron transport layer (ETL1) 161, an n-type charge generation layer (n-type CGL) 185, a p-type charge generation layer (p-type GCL) 135 which may comprise compound of Formula (I), a first hole transport layer (HTL) 140, a first electron blocking layer (EBL) 145, a first emission layer (EML) 150, a first hole blocking layer (HBL) 155, a second electron transport layer (ETL2) 160, and a cathode 190.

In the description above the method of manufacture an OLED 100 of the present invention is started with a substrate 110 onto which an anode 120 is formed, on the anode electrode 120, a first electron transport layer 161, an n-type CGL 185, a p-type CGL 135, a first hole transport layer 140, optional a first electron blocking layer 145, a first emission layer 150, optional a first hole blocking layer 155, optional a second electron transport layer 160, and a cathode 190 are formed, in that order or the other way around.

Fig. 5 is a schematic sectional view of a tandem OLED 100, according to another exemplary embodiment of the present invention. Fig. 5 differs from Fig. 4 in that the OLED 100 of Fig. 5 further comprises a second emission layer.

Referring to Fig. 5 the OLED 200 includes a substrate 110, an anode 120, a hole injection layer (HIL) 130 which may comprise compound of Formula (I), a first hole transport layer (HTL) 140, a first electron blocking layer (EBL) 145, a first emission layer (EML) 150, a first hole blocking layer (HBL) 155, a first electron transport layer (ETL) 160, an n-type charge generation layer (n- type CGL) 185, a p-type charge generation layer (p-type GCL) 135 which may comprise compound of Formula (I), a second hole transport layer (HTL) 141, a second electron blocking layer (EBL) 146, a second emission layer (EML) 151, a second hole blocking layer (EBL) 156, a second electron transport layer (ETL) 161, an electron injection layer (EIL) 180 and a cathode 190.

In the description above the method of manufacture an OLED 100 of the present invention is started with a substrate 110 onto which an anode 120 is formed, on the anode electrode 120, a hole injection layer 130, a first hole transport layer 140, optional a first electron blocking layer 145, a first emission layer 150, optional a first hole blocking layer 155, optional at least one first electron transport layer 160, an n-type CGL 185, a p-type CGL 135, a second hole transport layer 141, optional a second electron blocking layer 146, a second emission layer 151, an optional second hole blocking layer 156, an optional at least one second electron transport layer 161, an optional electron injection layer (EIL) 180 and a cathode 190 are formed, in that order or the other way around.

While not shown in Fig. 1 to 5, a sealing and/or capping layer may further be formed on the cathode layer 190, in order to seal the organic electronic device 100. In addition, various other modifications may be applied thereto.

Hereinafter, one or more exemplary embodiments of the present invention will be described in detail with, reference to the following examples. However, these examples are not intended to limit the purpose and scope of the one or more exemplary embodiments of the present invention.

Detailed description

The invention is furthermore illustrated by the following examples which are illustrative only and non-binding.

Compounds of formula (I) may be prepared as described in EP2180029A1 or WO2016097017A1 .

Calculated HOMO and LUMP

The HOMO and LUMO are calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). The optimized geometries and the HOMO and LUMO energy levels of the molecular structures are determined by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase. If more than one conformation is viable, the conformation with the lowest total energy is selected.

Thermogravimetric analysis

The term "TGA5%" denotes the temperature at which 5 % weight loss occurs during thermogravimetric analysis and is measured in °C.

The TGA5% value may be determined by by heating a 9-11 mg sample in a thermogravimetric analyser at a heating rate of 10 K/min in an open 100 pL aluminium pan, under a stream of nitrogen at a flow rate of 20 mL/min in the balance area and of 30 mL/min in the oven area.

The TGA5% value may provide an indirect measure of the volatility and/or decomposition temperature of a compound. In first approximation, the higher the TGA5% value the lower is the volatility of a compound and/or the higher the decomposition temperature.

According to one embodiment, the TGA5% value of compound of formula (I) is selected in the range of > 280 °C and < 390 °C; preferably of > 290 °C and < 380 °C, also preferred of > 295 °C and < 370 °C.

General procedure for fabrication of OLEDs

For bottom emission devices, see Table 3 and 5, a 15W /cm ² glass substrate with 90 nm ITO (available from Corning Co.) was cut to a size of 50 mm x 50 mm x 0.7 mm, ultrasonically washed with isopropyl alcohol for 5 minutes and then with pure water for 5 minutes, and washed again with UV ozone for 30 minutes, to prepare the anode layer.

Then, compound of formula F3 and compound of formula (I) according to Table 3 and 5 were co-deposited in vacuum on the anode layer, to form a HIL having a thickness of 10 nm. In comparative examples 1 and 2, comparative compounds 1 and 2 were used instead of compounds of formula (I). The composition of the HIL can be seen in Table 3 and 5.

Then, compound of formula F3 was vacuum deposited on the HIL, to form a first HTL having a thickness of 128 nm.

Then N,N-bis(4-(dibenzo[b,d]furan-4-yl)phenyl)-[ 1 , 1 ' : 4', 1 "-terphenyl]-4-amine (CAS 1198399-61-9) was vacuum deposited on the HTL, to form an electron blocking layer (EBL) having a thickness of 5 nm. Then 97 vol.-% H09 (Sun Fine Chemicals, Korea) as EML host and 3 vol.-% BD200 (Sun Fine Chemicals, Korea) as fluorescent blue dopant were co-deposited on the EBL, to form a first blue-emitting EML with a thickness of 20 nm.

Then the hole blocking layer (HBL) is formed with a thickness of 5 nm by depositing 2-(3'- (9,9-dimethyl-9H-fluoren-2-yl)-[l,r-biphenyl]-3-yl)-4,6-diph enyl-l,3,5-triazine on the emission layer.

Then, the electron transporting layer (ETL) having a thickness of 25 nm is formed on the hole blocking layer by co-depositing 50 wt.-% 4'-(4-(4-(4,6-diphenyl-l,3,5-triazin-2- yl)phenyl)naphthalen-l-yl)-[l,r-biphenyl]-4-carbonitrile and 50 wt.-% LiQ.

Then, the cathode layer having a thickness of 100 nm is formed on the ETL by depositing A1 at a rate of 0.01 to 1 A/s at 10 ⁷ mbar.

The OLED stack is protected from ambient conditions by encapsulation of the device with a glass slide. Thereby, a cavity is formed, which includes a getter material for further protection.

Organic electronic device comprising a charge generation layer (CGL)

For devices comprising a CGL, see Table 4, a 15W /cm ² glass substrate with 90 nm ITO (available from Corning Co.) was cut to a size of 50 mm x 50 mm x 0.7 mm, ultrasonically washed with isopropyl alcohol for 5 minutes and then with pure water for 5 minutes, and washed again with UV ozone for 30 minutes, to prepare the anode layer.

Then, the first electron transporting layer (ETL1) having a thickness of 30 nm is formed on the anode layer by co-depositing 50 wt.-% 4'-(4-(4-(4,6-diphenyl-l,3,5-triazin-2- yl)phenyl)naphthalen-l-yl)-[l,r-biphenyl]-4-carbonitrile and 50 wt.-% LiQ.

Then, the n-type CGL having a thickness of 15 nm is formed on the ETL1 by co depositing 99 vol.-% 2,2'-(l,3-Phenylene)bis[9-phenyl-l,10-phenanthroline] and 1 vol.-% Li.

Then, the p-type CGL having a thickness of 10 nm is formed on the n-type CGL by co depositing a substantially covalent matrix compound and a compound of formula (I). The composition of the p-type CGL can be seen in Table 4.

Then, the hole transport layer (HTL) having a thickness of 86 nm is formed on the p-type CGL by depositing a substantially covalent matrix compound. The composition of the HTL can be seen in Table 4. Then, an electron blocking layer (EBL) having a thickness of 5 nm is formed on the HTL by depositing N-([l,T-biphenyl]-4-yl)-9,9-diphenyl-N-(4- (triphenylsilyl)phenyl)-9H-fluoren-2-amine.

Then, an emission layer (EML) having a thickness of 20 nm is formed on the EBL by co-depositing 97 vol.-% H09 (Sun Fine Chemicals, Korea) as EML host and 3 vol.-%

BD200 (Sun Fine Chemicals, Korea) as fluorescent blue dopant.

Then the hole blocking layer (HBL) is formed with a thickness of 5 nm is formed on the emission layer by depositing 2-(3'-(9,9-dimethyl-9H-fluoren-2-yl)-[l,r-biphenyl]- 3-yl)-4,6-diphenyl-l,3,5-triazine.

Then, the second electron transporting layer (ETL2) having a thickness of 25 nm is formed on the hole blocking layer by co-depositing 50 wt.-% 4'-(4-(4-(4,6-diphenyl- l,3,5-triazin-2-yl)phenyl)naphthalen-l-yl)-[l,r-biphenyl]-4- carbonitrile and 50 wt.-%

LiQ.

Then, the cathode layer having a thickness of 100 nm is formed on the ETL2 by depositing A1 at a rate of 0.01 to 1 A/s at 10 ⁷ mbar.

The OLED stack is protected from ambient conditions by encapsulation of the device with a glass slide. Thereby, a cavity is formed, which includes a getter material for further protection.

To assess the performance of the inventive examples compared to the prior art, the current efficiency is measured at 20°C. The current-voltage characteristic is determined using a Keithley 2635 source measure unit, by sourcing a voltage U in V and measuring the current in mA flowing through the device under test. The voltage applied to the device is varied in steps of 0.1V in the range between 0V and 10V. Likewise, the luminance-voltage characteristics and CIE coordinates are determined by measuring the luminance in cd/m ² using an Instrument Systems CAS-140CT array spectrometer (calibrated by Deutsche Akkreditierungsstelle (DAkkS)) for each of the voltage values. The cd/A efficiency at 10 mA/cm2 is determined by interpolating the luminance-voltage and current-voltage characteristics, respectively.

In bottom emission devices, the emission is predominately Lambertian and quantified in percent external quantum efficiency (EQE). To determine the efficiency EQE in % the light output of the device is measured using a calibrated photodiode at 10 mA/cm2. In top emission devices, the emission is forward directed, non-Lambertian and also highly dependent on the mirco-cavity. Therefore, the efficiency EQE will be higher compared to bottom emission devices. To determine the efficiency EQE in % the light output of the device is measured using a calibrated photodiode at 10 mA/cm ²

Lifetime LT of the device is measured at ambient conditions (20°C) and 30 mA/cm ² , using a Keithley 2400 sourcemeter, and recorded in hours.

The brightness of the device is measured using a calibrated photo diode. The lifetime LT is defined as the time till the brightness of the device is reduced to 97 % of its initial value.

Technical Effect of the invention

In Table 1 are shown LUMO levels and TGA5%-temperatures (when available) for Examples A1 to A31 and comparative example 1 and 2 (=C1 and C2). Table 2 shows the structure of comparative examines Cl and C2.

LUMO levels were calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany) by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase.

Comparative compound 1 has a LUMO level of -4.58 eV and a TGA5% value of 265 °C.

Comparative compound 2 has a LUMO level of -4.79 eV and a TGA5% value of 268 °C. Comparative compound 2 differs from comparative compound 1 in the number of CF3 groups. In comparative compound 2, two fluorine atoms have been replaced by CF3 groups. As can be seen in Table 1 , the LUMO level of compounds of formula (I) is more negative compared to comparative compound 1. A more negative LUMO level is beneficial, as matrix compounds with more negative HOMO level are enabled. However, the volatility is very similar.

In inventive compound Al, the LUMO level is -4.82 eV and thereby more negative than the LUMO level of comparative compound 2. Additionally, the volatility is substantially improved at 297 °C. Inventive compound Al differs from comparative compound 2 in at least one of A '-A ² .

In inventive compounds A2 to A31 the LUMO level and/or TGA5% value are improved compared to comparative compounds 1 and 2.

Table 1 : Properties of compounds of formula (I) and comparative compounds 1 and 2

Table 2: Structure of the comparative compounds 1 and 2

In Table 3 performance data for organic electroluminescent devices comprising a hole injection layer (HIL) comprising comparative and inventive compounds are shown:

Table 3: Organic electronic devices comprising an hole injection layer (HIL) comprising comparative and inventive compounds.

As can be seen from Table 3, the operating voltage U for all devices is lower than for the comparative compounds. The external quantum efficiency EQE is improved over comparative examples 1 and 2.

A low operating voltage and improved efficiency may be beneficial for reduced power consumption and improved battery life, in particular in mobile devices.

Additionally, the lifetime LT are increased over the comparative examples 1 and 2. An improved LT is beneficial for improved long-term stability of organic electronic devices.

In Table 4 performance data for organic electroluminescent devices comprising a p- type charge injection layer (p-type CGL) comprising inventive compounds are shown.

Table 4: Organic electronic devices comprising a p-type charge injection layer (p- type CGL) comprising inventive compounds

A high EQE may be beneficial for reduced power consumption and improved battery life, in particular in mobile devices.

An improved LT97 may be beneficial for long lifetime of organic electronic devices.

In Table 5 performance data for organic electroluminescent devices comprising a hole injection layer (HIL) comprising comparative and inventive compounds are shown:

Table 5: Organic electronic devices comprising an hole injection layer (HIL) comprising comparative and inventive compounds.

As can be seen from Table 5, the performance of OLEDs is in comparable range to Examples 1 to 4 in Table 3. Performance of examples 7 to 23 is improved over comparative examples 1 and 2, see Table 3.

The particular combinations of elements and features in the above detailed embodiments are exemplary only; the interchanging and substitution of these teachings with other teachings in this and the patents/applications incorporated by reference are also expressly contemplated. As those skilled in the art will recognize, variations, modifications, and other implementations of what is described herein can occur to those of ordinary skill in the art without departing from the spirit and the scope of the invention as claimed. Accordingly, the foregoing description is by way of example only and is not intended as limiting. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage. The invention's scope is defined in the following claims and the equivalents thereto. Furthermore, reference signs used in the description and claims do not limit the scope of the invention as claimed.