Title:
ORGANIC DUAL-GATE MEMORY AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2011/042619
Kind Code:
A3
Abstract:
The organic memory device is a dual-gate transistor which comprises, in series, a first gate electrode (4), a first gate dielectric (6), an organic semiconductor material (2), a second gate dielectric (7) and a second gate electrode (8). Source and drain electrodes (5) are arranged in the organic semiconductor material (2) and define an inter-electrode surface. An entrapment area (9) is arranged between the organic semiconductor material (2) and one of the gate electrodes (4, 8), and electrically contacts one of the gate electrodes (4, 8) or the organic semiconductor material (2). The entrapment area (9) is at least opposite the inter-electrode surface.
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Inventors:
GWOZIECKI ROMAIN (FR)
BENWADIH MOHAMED (FR)
CORONEL PHILIPPE (FR)
JACOB STEPHANIE (FR)
BENWADIH MOHAMED (FR)
CORONEL PHILIPPE (FR)
JACOB STEPHANIE (FR)
Application Number:
PCT/FR2010/000650
Publication Date:
June 03, 2011
Filing Date:
September 30, 2010
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
GWOZIECKI ROMAIN (FR)
BENWADIH MOHAMED (FR)
CORONEL PHILIPPE (FR)
JACOB STEPHANIE (FR)
GWOZIECKI ROMAIN (FR)
BENWADIH MOHAMED (FR)
CORONEL PHILIPPE (FR)
JACOB STEPHANIE (FR)
International Classes:
H01L51/10
Foreign References:
| US20090101962A1 | 2009-04-23 | |||
| EP1367659A2 | 2003-12-03 | |||
| US7042755B1 | 2006-05-09 |
Other References:
LLOYD-HUGHES J ET AL: "Polymer Transistor Performance Monitored by Terahertz Spectroscopy", 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS: SHANGHAI, CHINA, 18 - 22 SEPTEMBER 2006, IEEE, PISCATAWAY, NJ, 1 September 2006 (2006-09-01), pages 203 - 203, XP031096236, ISBN: 978-1-4244-0399-8
FACCHETTI A; KIM C; YOON M-H; MARKS T J: "Interfacial phenomena affecting charge transport in small molecule organic thin-film transistors", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS - ORGANIC ELECTRONICS: MATERIALS, DEVICES AND APPLICATIONS, vol. 965, 27 November 2006 (2006-11-27) - 1 December 2006 (2006-12-01), pages 258 - 263, XP002566238
CUI T ET AL: "DUAL-GATE PENTACENE ORGANIC FIELD-EFFECT TRANSISTORS BASED ON A NANOASSEMBLED SIO2 NANOPARTICLE THIN FILM AS THE GATE DIELECTRIC LAYER", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 86, no. 6, 7 February 2005 (2005-02-07), pages 64102 - 01, XP001237999, ISSN: 0003-6951, DOI: DOI:10.1063/1.1861126
FACCHETTI A; KIM C; YOON M-H; MARKS T J: "Interfacial phenomena affecting charge transport in small molecule organic thin-film transistors", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS - ORGANIC ELECTRONICS: MATERIALS, DEVICES AND APPLICATIONS, vol. 965, 27 November 2006 (2006-11-27) - 1 December 2006 (2006-12-01), pages 258 - 263, XP002566238
CUI T ET AL: "DUAL-GATE PENTACENE ORGANIC FIELD-EFFECT TRANSISTORS BASED ON A NANOASSEMBLED SIO2 NANOPARTICLE THIN FILM AS THE GATE DIELECTRIC LAYER", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 86, no. 6, 7 February 2005 (2005-02-07), pages 64102 - 01, XP001237999, ISSN: 0003-6951, DOI: DOI:10.1063/1.1861126
Attorney, Agent or Firm:
HECKÉ, Gérard et al. (10 rue d'Arménie - Europol, BP 1537 Grenoble Cedex 1, FR)
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